The dual port EEPROM series consists of two independent banks, and each bank can be controlled separately using dedicated control pins. The two banks can each be controlled separately, but share the internal power supply system. In addition, this product uses a 2-wire serial interface, and is the optimal device for realizing substantial reductions in system cost and mounting area, as well as low power consumption. This product also incorporates a combine mode that allows the two-bank configuration (2K bits + 2K bits) to be used as a pseudo-one-bank configuration (4K bits) by setting the COBM# pin to the low level. Together with the 16-byte page write function, this enables a reduction in the number of factory write processes. This product incorporates high performance CMOS EEPROM technology and realizes high-speed operation and high-level reliability. The interface of this product is compatible with the I2C bus protocol, making it ideal as a nonvolatile memory for small-scale parameter storage. In addition, this product also supports DDC2TM, so it can also be used as an EDID data storage memory for display equipment.
Feature
- 2K bits (256 X 8 bits) + 2K bits (256 X 8 bits): 4k bits in total
- Bank configuration : 2-Bank (2k-bit + 2k-bit)
- Single supply voltage : 2.5V to 5.5V
- Two wire serial interface (I2C Bus), VESA DDC2TM compliant
- Operating clock frequency : 400kHz (max)
- Low power consumption : Standby: 5µA (max): One-bank read: 0.8 mA (max.)
- Automatic page write mode : 16 bytes
- Read mode : Sequential read and random read
- Erase/Write cycles : 106 cycles
- Data Retention : 20 years
- Default data : FFh(All address)
- High reliability : Adopts proprietary symmetric memory array configuration (USP6947325)Noise filters connected to SCL1, SDA1, SCL2 and SDA2 pins Incorporates a feature to prohibit write operations under low voltage conditions.
