The NIS5112D1R2G is an integrated switch utilizing a high side N-channel FET driven by an internal charge pump.This switch features a MOSFET which allows for current sensing using inexpensive chip resistors intead of expensive, low impedance current shunts.It is designed to operate in 12 V systems and includes a robust thermal protection circuit.
Feature
- Integrated Power Device
- Power Device Thermally Protected
- No External Current Shunt Required
- Enable/Timer Pin
- Adjustable Slew Rate for Output Voltage
- 9 V to 18 V Input Range
- 30 mΩ Typical
- Internal Charge Pump
Applications
(Picture: Pinout)