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ISL6627IRZ-T

  • 描述:输出数量: one 应用及使用: 控制器,Intel VR11.1、VR12 输入电压: 4.5伏~5.5伏 供应商设备包装: 10-DFN(3x3) 安装类别: 表面安装
  • 品牌: 瑞萨电子 (Renesas)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 6000

数量 单价 合计
6000+ 23.94937 143696.23800
  • 库存: 0
  • 单价: ¥23.94937
  • 数量:
    - +
  • 总计: ¥143,696.24
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规格参数

  • 部件状态 可供货
  • 输出数量 one
  • 制造厂商 瑞萨电子 (Renesas)
  • 工作温度 -40摄氏度~85摄氏度
  • 安装类别 表面安装
  • 输出电压 -
  • 输入电压 4.5伏~5.5伏
  • 供应商设备包装 10-DFN(3x3)
  • 包装/外壳 10-VFDFN外露衬垫
  • 应用及使用 控制器,Intel VR11.1、VR12

ISL6627IRZ-T 产品详情

The ISL6627IRZ-T is a high frequency MOSFET driver designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. The advanced PWM protocol of ISL6627IRZ-T is specifically designed to work with Intersil VR11.1, VR12 controllers and combined with N-Channel MOSFETs to form a complete core-voltage regulator solution for advanced microprocessors. When ISL6627IRZ-T detects a PSI protocol sent by an Intersil VR11.1, VR12 controller, it activates Diode Emulation (DE) operation; otherwise, it operates in normal Continuous Conduction Mode (CCM) PWM mode.To further enhance light load efficiency, the ISL6627IRZ-T enables diode emulation operation during PSI mode. This allows Discontinuous Conduction Mode (DCM) by detecting when the inductor current reaches zero and subsequently turning off the low side MOSFET to prevent it from sinking current.When ISL6627IRZ-T detects Diode Braking command from the PWM, it turns off both gates and reduces overshoot in load transient situations.An advanced adaptive shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize dead time. The user also has the option to program the driver working in fixed propagation delay mode to optimize the regulator efficiency. The ISL6627IRZ-T has a 20kΩ integrated high-side gate-to-source resistor to prevent self turn-on due to high input bus dV/dt.

Feature

  • Intersil VR11.1 and VR12 Compatible
  • Dual MOSFET Driver for Synchronous Rectified Bridge
  • Advanced Adaptive Zero Shoot-through Protection
  • Programmable Fixed Deadtime for Efficiency Optimization
  • Low Standby Bias Current
  • 36V Internal Bootstrap Diode
  • Bootstrap Capacitor Overcharge Prevention
  • Supports High Switching Frequency
  • 4A Sinking Current Capability
  • Fast Rise/Fall Times and Low Propagation Delays
  • Integrated High-Side Gate-to-Source Resistor to Prevent Self Turn-on Due to High Input Bus dV/dt
  • Power Rails Undervoltage Protection
  • Expandable Bottom Copper Pad for Enhanced Heat Sinking
  • Dual Flat 10 Ld (3x3 DFN) Package
  • Near Chip-Scale Package Footprint; Improves PCB Efficiency and Thinner in Profile
  • Pb-Free (RoHS Compliant)


ISL6627IRZ-T所属分类:特殊用途电压调节器,ISL6627IRZ-T 由 瑞萨电子 (Renesas) 设计生产,可通过久芯网进行购买。ISL6627IRZ-T价格参考¥23.949373,你可以下载 ISL6627IRZ-T中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询ISL6627IRZ-T规格参数、现货库存、封装信息等信息!

瑞萨电子 (Renesas)

瑞萨电子 (Renesas)

Renesas Electronics Corporation通过完整的半导体解决方案提供值得信赖的嵌入式设计创新,使数十亿连接的智能设备能够改善人们的工作和生活方式—安全可靠。作为微控制器...

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