Feature
General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
Features and benefits
• Trench MOSFET technology
• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
• Exposed drain pad for excellent thermal conduction
• Tin-plated 100 % solderable side pads for optical solder inspection
• AEC-Q101 qualified
(Picture:Pinout / Diagram)
