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The BC 817K-16 E6433 is Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR, that includes BC 817K Series, they are designed to operate with a Reel Packaging, Part Aliases is shown on datasheet note for use in a BC817K16E6433HTMA1 BC817K16E6433XT SP000271829, that offers Unit Weight features such as 0.007090 oz, Mounting Style is designed to work in SMD/SMT, as well as the SOT-23 Package Case, the device can also be used as Single Configuration. In addition, the Pd Power Dissipation is 500 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C, and Collector Emitter Voltage VCEO Max is 45 V, and the Transistor Polarity is NPN, and Collector Emitter Saturation Voltage is 0.7 V, and the Collector Base Voltage VCBO is 50 V, and Emitter Base Voltage VEBO is 5 V, and the Maximum DC Collector Current is 0.5 A, and Gain Bandwidth Product fT is 170 MHz, and the Continuous Collector Current is 500 mA, and DC Collector Base Gain hfe Min is 100, and the DC Current Gain hFE Max is 100 at 100 mA at 1 V.
The BC 807U E6327 is Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR ARRAY, that includes PNP Transistor Polarity, they are designed to operate with a BC807 Series, Pd Power Dissipation is shown on datasheet note for use in a 330 mW, that offers Part Aliases features such as BC807UE6327HTSA1 BC807UE6327XT SP000012395, Packaging is designed to work in Reel, as well as the SC-74-6 Package Case, the device can also be used as SMD/SMT Mounting Style, it has an Minimum Operating Temperature range of - 65 C, it has an Maximum Operating Temperature range of + 150 C, the device has a 500 mA of Maximum DC Collector Current, and Gain Bandwidth Product fT is 200 MHz, and the Emitter Base Voltage VEBO is 5 V, and DC Current Gain hFE Max is 400 at 100 mA at 1 V, and the DC Collector Base Gain hfe Min is 160 at 100 mA at 1 V, and Continuous Collector Current is 0.5 A, and the Configuration is Dual, and Collector Emitter Voltage VCEO Max is 45 V, and the Collector Emitter Saturation Voltage is 0.7 V, and Collector Base Voltage VCBO is 50 V.
The BC 817K-16 E6327 is Bipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.5A, that includes 50 V Collector Base Voltage VCBO, they are designed to operate with a 45 V Collector Emitter Voltage VCEO Max, Configuration is shown on datasheet note for use in a Single, that offers DC Collector Base Gain hfe Min features such as 100, Emitter Base Voltage VEBO is designed to work in 5 V, as well as the 170 MHz Gain Bandwidth Product fT, the device can also be used as 0.5 A Maximum DC Collector Current, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C, the device has a SMD/SMT of Mounting Style, and Package Case is SOT-23, and the Packaging is Reel, and Part Aliases is BC817K16E6327HTSA1 BC817K16E6327XT SP000271788, and the Pd Power Dissipation is 500 mW, and Series is BC 817K, and the Transistor Polarity is NPN, and Unit Weight is 0.007090 oz.
The BC 807-25 E6327 is Bipolar Transistors - BJT PNP 45 V 500 mA, that includes SOT-23 Package Case, they are designed to operate with a SMD/SMT Mounting Style, Configuration is shown on datasheet note for use in a Single, that offers Packaging features such as Reel, Transistor Polarity is designed to work in PNP, as well as the BC80725E6327HTSA1 Part Aliases, the device can also be used as BC807 Series. In addition, the Collector Base Voltage VCBO is 50 V, the device is offered in 5 V Emitter Base Voltage VEBO, the device has a 45 V of Collector Emitter Voltage VCEO Max, and Pd Power Dissipation is 330 mW, and the Gain Bandwidth Product fT is 200 MHz, and DC Collector Base Gain hfe Min is 160, and the Maximum DC Collector Current is 0.5 A, and Unit Weight is 0.007090 oz, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C.