For additional information contact NXP Semiconductor.
Feature
- Based on new 65 V LDMOS technology, designed for ease of use
- Characterized from 30 to 65 V for extended power range
- Unmatched input and output
- High breakdown voltage for enhanced reliability and higher efficiency architectures
- High drain-source avalanche energy absorption capability
- High ruggedness. Handles 65:1 VSWR.
- RoHS compliant
- Lower thermal resistance option in over-molded plastic package: MRFX1K80N
- Included in our product longevity program with assured supply for a minimum of 15 years after launch
- Industrial, scientific, medical (ISM)
- Laser generation
- Plasma generation
- Particle accelerators
- MRI, RF ablation and skin treatment
- Industrial heating, welding and drying systems
- Radio and VHF TV broadcast
- Aerospace
- HF communications
- Radar
