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The PSMN7R6-100BSEJ is MOSFET N-channel 100 V 7.6 mo FET, that includes Reel Packaging, they are designed to operate with a 0.139332 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-252-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 296 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 47 ns, and Rise Time is 48 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 75 A, and the Vds Drain Source Breakdown Voltage is 100 V, and Vgs th Gate Source Threshold Voltage is 3 V, and the Rds On Drain Source Resistance is 6.5 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 82 ns, and Typical Turn On Delay Time is 31 ns, and the Qg Gate Charge is 128 nC, and Channel Mode is Enhancement.
The PSMN7R5-30MLDX is MOSFET 30V N-Channel 7.5mOhm, that includes 2.2 V Vgs th Gate Source Threshold Voltage, they are designed to operate with a 2.2 V Vgs Gate Source Voltage, Vds Drain Source Breakdown Voltage is shown on datasheet note for use in a 30 V, that offers Typical Turn On Delay Time features such as 7.1 ns, Typical Turn Off Delay Time is designed to work in 8.5 ns, as well as the 1 N-Channel Transistor Type, the device can also be used as N-Channel Transistor Polarity. In addition, the Technology is Si, the device is offered in 10.4 ns Rise Time, the device has a 10.3 mOhms of Rds On Drain Source Resistance, and Qg Gate Charge is 11.3 nC, and the Pd Power Dissipation is 45 W, and Packaging is Reel, and the Package Case is LFPAK-4, and Number of Channels is 1 Channel, and the Mounting Style is SMD/SMT, and Id Continuous Drain Current is 57 A, and the Fall Time is 5.5 ns, and Channel Mode is Enhancement.
The PSMN7R5-30YLDX is MOSFET 30V N-Channel 7.5mOhm, that includes Enhancement Channel Mode, they are designed to operate with a 5.5 ns Fall Time, Id Continuous Drain Current is shown on datasheet note for use in a 51 A, that offers Mounting Style features such as SMD/SMT, Number of Channels is designed to work in 1 Channel, as well as the LFPAK-4 Package Case, the device can also be used as Reel Packaging. In addition, the Pd Power Dissipation is 34 W, the device is offered in 11.3 nC Qg Gate Charge, the device has a 10.2 mOhms of Rds On Drain Source Resistance, and Rise Time is 10.4 ns, and the Technology is Si, and Transistor Polarity is N-Channel, and the Transistor Type is 1 N-Channel, and Typical Turn Off Delay Time is 8.5 ns, and the Typical Turn On Delay Time is 7.1 ns, and Vds Drain Source Breakdown Voltage is 30 V, and the Vgs Gate Source Voltage is 2.2 V, and Vgs th Gate Source Threshold Voltage is 2.2 V.
PSMN7R6-60BS with EDA / CAD Models manufactured by NXP. The PSMN7R6-60BS is available in TO-263 Package, is part of the FETs - Single.
