TYPICAL APPLICATIONS
• Power supply
• Measuring equipment
• Security equipment
• Telephone equipment
• Sensing equipment
Feature
1. 1 Form B output type
2. 60V type couples high capacity
(0.55A) with low on-resistance (Typ. 1Ω).
3. Low on-resistance
This has been realized thanks to the
built-in MOSFET processed by our
proprietary method, DSD (Double
diffused and Selective Doping) method.
4. Controls low-level analog signals
PhotoMOS feature extremely low closed
circuit offset voltage to enable control of
low-level analog signals without
distortion.
5. High sensitivity and low on resistance
Can control max. 0.55 A load current with
5 mA input current.
Low on-resistance of Typ. 1Ω
(AQV412EH).
6. Low-level off-state leakage current
7. Reinforced insulation: 5,000 V
More than 0.4 mm internal insulation
distance between inputs and outputs.
Conforms to EN41003, EN60950
(reinforced insulation).
