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The NTDV3055L104T4G is MOSFET NFET 60V 12A 0.104R, that includes NTD3055L104 Series, they are designed to operate with a Reel Packaging, Unit Weight is shown on datasheet note for use in a 0.139332 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-252-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 48 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 80 ns, and the Rise Time is 210 ns, and Id Continuous Drain Current is 12 A, and the Vds Drain Source Breakdown Voltage is 60 V, and Vgs th Gate Source Threshold Voltage is 2 V, and the Rds On Drain Source Resistance is 104 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 40 ns, and Typical Turn On Delay Time is 20 ns, and the Qg Gate Charge is 20 nC.
The NTDV5805NT4G is MOSFET NFET 40V 51A 9.5MOHM, that includes 40 V Vds Drain Source Breakdown Voltage, they are designed to operate with a 0.139332 oz Unit Weight, Transistor Polarity is shown on datasheet note for use in a N-Channel, that offers Technology features such as Si, Series is designed to work in NTD5805N, as well as the 9.5 mOhms Rds On Drain Source Resistance, the device can also be used as Reel Packaging. In addition, the Package Case is TO-252-3, the device is offered in SMD/SMT Mounting Style, the device has a 51 A of Id Continuous Drain Current.
The NTDV5804NT4G is MOSFET NFET 40V 69A 8.5MOHM, that includes Reel Packaging, they are designed to operate with a NTD5804N Series, Technology is shown on datasheet note for use in a Si.