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IDY15S120XKSA1 with pin details, that includes thinQ!? Series, they are designed to operate with a Tube Packaging, Package Case is shown on datasheet note for use in a TO-247-3 Variant, that offers Mounting Type features such as Through Hole, Supplier Device Package is designed to work in PG-TO247HC-3, as well as the No Recovery Time > 500mA (Io) Speed, the device can also be used as Silicon Carbide Schottky Diode Type. In addition, the Current Reverse Leakage Vr is 180μA @ 1200V, the device is offered in 1.8V @ 10A Voltage Forward Vf Max If, the device has a 1200V (1.2kV) of Voltage DC Reverse Vr Max, and Current Average Rectified Io is 7.5A (DC), and the Reverse Recovery Time trr is 0ns, and Capacitance Vr F is 375pF @ 1V, 1MHz, it has an Operating Temperature Junction range of -55°C ~ 150°C.
IDY10S120XKSA1 with user guide, that includes 1.8V @ 10A Voltage Forward Vf Max If, they are designed to operate with a 1200V (1.2kV) Voltage DC Reverse Vr Max, Supplier Device Package is shown on datasheet note for use in a PG-TO247HC-3, that offers Speed features such as No Recovery Time > 500mA (Io), Series is designed to work in thinQ!?, as well as the 0ns Reverse Recovery Time trr, the device can also be used as Tube Packaging. In addition, the Package Case is TO-247-3 Variant, it has an Operating Temperature Junction range of -55°C ~ 175°C, the device has a Through Hole of Mounting Type, and Diode Type is Silicon Carbide Schottky, and the Current Reverse Leakage Vr is 120μA @ 1200V, and Current Average Rectified Io is 5A (DC), and the Capacitance Vr F is 250pF @ 1V, 1MHz.
IDW75E60(D75E60) with circuit diagram manufactured by INFINEON. The IDW75E60(D75E60) is available in TO247 Package, is part of the IC Chips.