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The NPT2022 is RF JFET Transistors DC-2.0GHz 100W Gain 20dB GaN HEMT, that includes Tray Packaging, they are designed to operate with a Screw Mounting Style, it has an Operating Temperature Range range of - 40 C to + 85 C, that offers Technology features such as GaN Si, Configuration is designed to work in Single, as well as the HEMT Transistor Type, the device can also be used as 21 dB Gain. In addition, the Output Power is 100 W, it has an Maximum Operating Temperature range of + 85 C, it has an Minimum Operating Temperature range of - 40 C, and Operating Frequency is 2 GHz, and the Id Continuous Drain Current is 24 mA, and Vds Drain Source Breakdown Voltage is 160 V, and the Vgs th Gate Source Threshold Voltage is - 1.6 V, and Rds On Drain Source Resistance is 200 mOhms, and the Transistor Polarity is N-Channel, and Vgs Gate Source Breakdown Voltage is 3 V.
NPT2021-SMBPPR with user guide, that includes Transistor Type, they are designed to operate with a Board Supplied Contents, Frequency is shown on datasheet note for use in a 0Hz ~ 2.2GHz, that offers For Use With Related Products features such as NPT2021.
NPT2022-SMBPPR with circuit diagram, that includes NPT2022 For Use With Related Products, they are designed to operate with a 0Hz ~ 2GHz Frequency, Supplied Contents is shown on datasheet note for use in a Board, that offers Type features such as Transistor.