9icnet provides you with BPW85C designed and produced by Vishay Semiconductor Opto Division, which is sold in 9icnet on the spot, and can be purchased through channels such as the original factory and agents. BPW85C price reference $0.61000. Vishay Semiconductor Opto Division BPW85C Package/Specification: PHOTOTRANSISTOR 450 TO 1080 NM. You can download BPW85C english data, pin diagram, Datasheet data sheet function manual, the data contains detailed pin diagrams of diode rectifiers, application circuit diagrams of functions, voltages, usage methods and tutorials.
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The BPW85 is PHOTOTRANSISTOR NPN 3MM CLEAR, that includes Phototransistors Product, they are designed to operate with a Phototransistor Type, Packaging is shown on datasheet note for use in a Bulk, that offers Package Case features such as Radial, it has an Operating Temperature range of -40°C ~ 100°C (TA), as well as the Through Hole Mounting Type, the device can also be used as 150mW Power Max. In addition, the Current Collector Ic Max is 50mA, the device is offered in 70V Voltage Collector Emitter Breakdown Max, the device has a Top View of Orientation, and Wavelength is 850nm, and the Current Dark Id Max is 200nA, and Viewing Angle is 50°, and the Pd Power Dissipation is 100 mW, it has an Maximum Operating Temperature range of + 100 C, it has an Minimum Operating Temperature range of - 40 C, and Collector Emitter Voltage VCEO Max is 70 V, and the Fall Time is 2.3 us, and Rise Time is 2 us, and the Collector Emitter Saturation Voltage is 0.3 V, and Dark Current is 200 nA, and the Maximum On State Collector Current is 50 mA, and Collector Emitter Breakdown Voltage is 70 V, and the Light Current is 0.8 mA.
The BPW85A is PHOTOTRANSISTOR NPN 3MM CLEAR, that includes 850nm Wavelength, they are designed to operate with a 70V Voltage Collector Emitter Breakdown Max, Viewing Angle is shown on datasheet note for use in a 50°, that offers Type features such as Chip, Product is designed to work in Phototransistors, as well as the 100mW Power Max, the device can also be used as 100 mW Pd Power Dissipation. In addition, the Packaging is Bulk, the device is offered in Radial Package Case, the device has a Top View of Orientation, it has an Operating Temperature range of -40°C ~ 100°C (TA), and the Mounting Style is Through Hole, and Mounting Type is Through Hole, it has an Minimum Operating Temperature range of - 40 C, it has an Maximum Operating Temperature range of + 100 C, and the Maximum On State Collector Current is 50 mA, and Light Current is 2.5 mA, and the Dark Current is 200 nA, and Current Dark Id Max is 200nA, and the Current Collector Ic Max is 100mA, and Collector Emitter Voltage VCEO Max is 70 V, and the Collector Emitter Saturation Voltage is 0.3 V, and Collector Emitter Breakdown Voltage is 70 V.
The BPW85B is PHOTOTRANSISTOR NPN 3MM CLEAR, that includes 70 V Collector Emitter Breakdown Voltage, they are designed to operate with a 0.3 V Collector Emitter Saturation Voltage, Collector Emitter Voltage VCEO Max is shown on datasheet note for use in a 70 V, that offers Current Collector Ic Max features such as 100mA, Current Dark Id Max is designed to work in 200nA, as well as the 200 nA Dark Current, the device can also be used as 4 mA Light Current. In addition, the Maximum On State Collector Current is 50 mA, it has an Maximum Operating Temperature range of + 100 C, it has an Minimum Operating Temperature range of - 40 C, and Mounting Type is Through Hole, and the Mounting Style is Through Hole, it has an Operating Temperature range of -40°C ~ 100°C (TA), and the Orientation is Top View, and Package Case is Radial, and the Packaging is Bulk, and Pd Power Dissipation is 100 mW, and the Power Max is 100mW, and Product is Phototransistors, and the Type is Chip, and Viewing Angle is 50°, and the Voltage Collector Emitter Breakdown Max is 70V, and Wavelength is 850nm.
