:
Each OP505 and OP506 devices consist of an NPN silicon phototransistor, the OP535 device consist of an NPN silicon photodarlington transistor and the OP705 device consist of an NPN silicon phototransistor with a large value resistor integrated between the Base and Emitter for low light signal rejection. All of the devices are molded in a blue-tinted T-1 (3mm) epoxy package
Applications:
• Space-limited applications
• Interruptive applications to detect media which is semi-transparent to infrared light
Feature
:
• T-1 package style
• Variety of sensitivity ranges
• Choice of narrow or wide receiving angle
• Small package size ideal for space-limited applications
• 0.050” [1.27mm] or 0.100” [2.54mm] Lead spacing
