9icnet provides you with AAS33051LLEATR designed and produced by Allegro MicroSystems, which is sold in 9icnet on the spot, and can be purchased through channels such as the original factory and agents. AAS33051LLEATR price reference $2.57488. Allegro MicroSystems AAS33051LLEATR Package/Specification: SINGLE DIE ASIL ANGLE SENSOR WIT. You can download AAS33051LLEATR english data, pin diagram, Datasheet data sheet function manual, the data contains detailed pin diagrams of diode rectifiers, application circuit diagrams of functions, voltages, usage methods and tutorials.
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The AT-30511-BLKG is TRANS NPN BIPO 5.5V 8MA SOT-143, that includes Bulk Alternate Packaging Packaging, they are designed to operate with a SMD/SMT Mounting Style, Package Case is shown on datasheet note for use in a TO-253-4, TO-253AA, that offers Technology features such as Si, Mounting Type is designed to work in Surface Mount, as well as the SOT-143 Supplier Device Package, the device can also be used as Single Dual Emitter Configuration. In addition, the Power Max is 100mW, the device is offered in NPN Transistor Type, the device has a 8mA of Current Collector Ic Max, and Voltage Collector Emitter Breakdown Max is 5.5V, and the DC Current Gain hFE Min Ic Vce is 70 @ 1mA, 2.7V, and Noise Figure dB Typ f is 1.1dB ~ 1.4dB @ 900MHz, and the Gain is 14dB ~ 16dB, and Pd Power Dissipation is 100 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C, and the Operating Frequency is 30000 MHz, and Collector Emitter Voltage VCEO Max is 5.5 V, and the Transistor Polarity is NPN, and Emitter Base Voltage VEBO is 1.5 V, and the Maximum DC Collector Current is 0.008 A, and Continuous Collector Current is 8 mA, and the DC Collector Base Gain hfe Min is 70 at 1 mA at 2.7 V.
AT30511 with user guide manufactured by AGILENT. The AT30511 is available in SOT-143 Package, is part of the RF Transistors (BJT).
AT-30511 with circuit diagram manufactured by HP. The AT-30511 is available in SOT-143 Package, is part of the RF Transistors (BJT).
