9icnet provides you with OJ2735E-R52 designed and produced by Ohmite, which is sold in 9icnet on the spot, and can be purchased through channels such as the original factory and agents. OJ2735E-R52 price reference $0.00777. Ohmite OJ2735E-R52 Package/Specification: RES 27K OHM 5% 1/8W AXIAL. You can download OJ2735E-R52 english data, pin diagram, Datasheet data sheet function manual, the data contains detailed pin diagrams of diode rectifiers, application circuit diagrams of functions, voltages, usage methods and tutorials.
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The J271 is JFET P-CH 30V 0.35W TO92, that includes Bulk Packaging, they are designed to operate with a 0.016000 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-226-3, TO-92-3 (TO-226AA), Technology is designed to work in Si, as well as the Through Hole Mounting Type, the device can also be used as TO-92-3 Supplier Device Package. In addition, the Configuration is Single, the device is offered in P-Channel FET Type, the device has a 350mW of Power Max, and Voltage Breakdown V BRGSS is 30V, and the Current Drain Idss Vds Vgs=0 is 6mA @ 15V, and Voltage Cutoff VGS off Id is 1.5V @ 1nA, and the Pd Power Dissipation is 360 mW, and Id Continuous Drain Current is 5 mA, and the Vds Drain Source Breakdown Voltage is - 10 V, and Transistor Polarity is P-Channel, and the Forward Transconductance Min is 8 mS, and Vgs Gate Source Breakdown Voltage is - 30 V, and the Gate Source Cutoff Voltage is 4.5 V.
The J270 is JFET P-CH 30V 0.35W TO92, that includes 500mV @ 1nA Voltage Cutoff VGS off Id, they are designed to operate with a 30V Voltage Breakdown V BRGSS, Vgs Gate Source Breakdown Voltage is shown on datasheet note for use in a - 30 V, that offers Vds Drain Source Breakdown Voltage features such as - 10 V, Unit Weight is designed to work in 0.016000 oz, as well as the P-Channel Transistor Polarity, the device can also be used as Si Technology. In addition, the Supplier Device Package is TO-92-3, the device is offered in 350mW Power Max, the device has a 360 mW of Pd Power Dissipation, and Packaging is Bulk, and the Package Case is TO-226-3, TO-92-3 (TO-226AA), and Mounting Style is Through Hole, and the Mounting Type is Through Hole, and Id Continuous Drain Current is 5 mA, and the Gate Source Cutoff Voltage is 2 V, and Forward Transconductance Min is 6 mS, and the FET Type is P-Channel, and Current Drain Idss Vds Vgs=0 is 2mA @ 15V, and the Configuration is Single.
J270_D26Z with circuit diagram, that includes 2mA @ 15V Current Drain Idss Vds Vgs=0, they are designed to operate with a P-Channel FET Type, Mounting Type is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Packaging is designed to work in Tape & Reel (TR), as well as the 350mW Power Max, the device can also be used as TO-92-3 Supplier Device Package. In addition, the Voltage Breakdown V BRGSS is 30V, the device is offered in 500mV @ 1nA Voltage Cutoff VGS off Id.
J270_D27Z with EDA / CAD Models, that includes TO-92-3 Supplier Device Package, they are designed to operate with a TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Package Case, Mounting Type is shown on datasheet note for use in a Through Hole, that offers Packaging features such as Tape & Reel (TR), FET Type is designed to work in P-Channel, as well as the 500mV @ 1nA Voltage Cutoff VGS off Id, the device can also be used as 350mW Power Max. In addition, the Voltage Breakdown V BRGSS is 30V, the device is offered in 2mA @ 15V Current Drain Idss Vds Vgs=0.
