A614

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA614 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -55V (Min.) ·Collector-Emitter Saturation Voltage: VCE(sat)= -0.5V (Max.)@ IC= -1A ·Collector Power Dissipation: PC= 25W@ TC= 25℃ APPLICATIONS ·Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage w w PARAMETER s c s i . w VALUE -80 -55 -5 -3 25 UNIT n c . i m e V V VEBO Emitter-Base Voltage V IC Collector Current-Continuous A PC Collector Power Dissipation W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA614 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 -55 V V(BR)CBO Collector-Base Breakdown Voltage IC= -500μA; IE= 0 -80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -500μA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A B -0.5 V ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain ‹ hFE Classifications R 40-80 O 70-140 w Y . w w n c . i m e s c is VEB= -5; IC= 0 IC= -0.5A; VCE= -5V 40 VCB= -80V; IE= 0 -50 μA -50 μA 240 120-240 isc 2 […]