9icnet provides you with ON4355E-R58 designed and produced by Ohmite, which is sold in 9icnet on the spot, and can be purchased through channels such as the original factory and agents. ON4355E-R58 price reference $0.248. Ohmite ON4355E-R58 Package/Specification: RES 4.3M OHM 5% 2W AXIAL. You can download ON4355E-R58 english data, pin diagram, Datasheet data sheet function manual, the data contains detailed pin diagrams of diode rectifiers, application circuit diagrams of functions, voltages, usage methods and tutorials.
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1N4305_T50R with pin details, that includes Tape & Reel (TR) Packaging, they are designed to operate with a DO-204AH, DO-35, Axial Package Case, Mounting Type is shown on datasheet note for use in a Through Hole, that offers Supplier Device Package features such as DO-35, Speed is designed to work in Fast Recovery = 200mA (Io), as well as the Standard Diode Type, the device can also be used as 100nA @ 50V Current Reverse Leakage Vr. In addition, the Voltage Forward Vf Max If is 850mV @ 10mA, the device is offered in 75V Voltage DC Reverse Vr Max, the device has a 300mA of Current Average Rectified Io, and Reverse Recovery Time trr is 4ns, and the Capacitance Vr F is 2pF @ 0V, 1MHz, it has an Operating Temperature Junction range of 175°C (Max).
The 1N4305TR is DIODE GEN PURP 75V 300MA DO35, that includes 850mV @ 10mA Voltage Forward Vf Max If, they are designed to operate with a 75V Voltage DC Reverse Vr Max, Supplier Device Package is shown on datasheet note for use in a DO-35, that offers Speed features such as Fast Recovery = 200mA (Io), Reverse Recovery Time trr is designed to work in 4ns, as well as the Tape & Reel (TR) Packaging, the device can also be used as DO-204AH, DO-35, Axial Package Case, it has an Operating Temperature Junction range of 175°C (Max), the device is offered in Through Hole Mounting Type, the device has a Standard of Diode Type, and Current Reverse Leakage Vr is 100nA @ 50V, and the Current Average Rectified Io is 300mA, and Capacitance Vr F is 2pF @ 0V, 1MHz.
The 1N4305 is DIODE GEN PURP 75V 300MA DO35, that includes 2pF @ 0V, 1MHz Capacitance Vr F, they are designed to operate with a 300mA Current Average Rectified Io, Current Reverse Leakage Vr is shown on datasheet note for use in a 100nA @ 50V, that offers Diode Type features such as Standard, Mounting Type is designed to work in Through Hole, it has an Operating Temperature Junction range of 175°C (Max), the device can also be used as DO-204AH, DO-35, Axial Package Case. In addition, the Packaging is Bulk, the device is offered in 4ns Reverse Recovery Time trr, the device has a Fast Recovery = 200mA (Io) of Speed, and Supplier Device Package is DO-35, and the Voltage DC Reverse Vr Max is 75V, and Voltage Forward Vf Max If is 850mV @ 10mA.
1N4305-1 with EDA / CAD Models, that includes Bulk Packaging.
