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The EMH9T2R is TRANS 2NPN PREBIAS 0.15W EMT6, that includes EMH9 Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as SOT-563, SOT-666, Mounting Type is designed to work in Surface Mount, as well as the EMT6 Supplier Device Package, the device can also be used as Dual Configuration. In addition, the Power Max is 150mW, the device is offered in 2 NPN - Pre-Biased (Dual) Transistor Type, the device has a 100mA of Current Collector Ic Max, and Voltage Collector Emitter Breakdown Max is 50V, and the Resistor Base R1 Ohms is 10k, and Resistor Emitter Base R2 Ohms is 47k, and the DC Current Gain hFE Min Ic Vce is 68 @ 5mA, 5V, and Vce Saturation Max Ib Ic is 300mV @ 250μA, 5mA, and the Current Collector Cutoff Max is 500nA, and Frequency Transition is 250MHz, and the Pd Power Dissipation is 150 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Collector Emitter Voltage VCEO Max is 50 V, and the Transistor Polarity is NPN, and Continuous Collector Current is 100 mA, and the DC Collector Base Gain hfe Min is 68, and Typical Input Resistor is 10 kOhms, and the Typical Resistor Ratio is 4.7, and Peak DC Collector Current is 100 mA.
EMH9 T2R with user guide manufactured by ROHM. The EMH9 T2R is available in SOT-363 Package, is part of the Transistors (BJT) - Arrays, Pre-Biased.
EMH9 T2R with circuit diagram manufactured by ROHM. The EMH9 T2R is available in SOT-563 Package, is part of the Transistors (BJT) - Arrays, Pre-Biased.
