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The IDH16G120C5XKSA1 is DIODE SCHOTTKY 1200V 16A TO220-2, that includes thinQ!? Series, they are designed to operate with a Schottky Silicon Carbide Diodes Product, Packaging is shown on datasheet note for use in a Tube, that offers Part Aliases features such as IDH16G120C5 SP001222696, Unit Weight is designed to work in 0.211644 oz, as well as the Through Hole Mounting Style, the device can also be used as TO-220-2 Package Case. In addition, the Technology is SiC, the device is offered in Through Hole Mounting Type, the device has a PG-TO220-2-1 of Supplier Device Package, and Configuration is Single, and the Speed is Fast Recovery = 200mA (Io), and Diode Type is Silicon Carbide Schottky, and the Current Reverse Leakage Vr is 50μA @ 1200V, and Voltage Forward Vf Max If is 1.95V @ 16A, and the Voltage DC Reverse Vr Max is 1200V (1.2kV), and Current Average Rectified Io is 16A (DC), and the Capacitance Vr F is 730pF @ 1V, 1MHz, it has an Operating Temperature Junction range of -55°C ~ 175°C, and the Pd Power Dissipation is 250 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Vf Forward Voltage is 1.65 V, and the Vr Reverse Voltage is 1.2 kV, and Ir Reverse Current is 5.5 uA, and the If Forward Current is 16 A, and Vrrm Repetitive Reverse Voltage is 1.2 kV, and the Ifsm Forward Surge Current is 140 A.
The IDH16G65C5 is DIODE SCHOTTKY 650V 16A TO220-2, that includes 1.7V @ 16A Voltage Forward Vf Max If, they are designed to operate with a 650V Voltage DC Reverse Vr Max, Unit Weight is shown on datasheet note for use in a 0.211644 oz, that offers Supplier Device Package features such as PG-TO220-2, Speed is designed to work in No Recovery Time > 500mA (Io), as well as the thinQ!? Series, the device can also be used as 0ns Reverse Recovery Time trr. In addition, the Part Aliases is IDH16G65C5XK IDH16G65C5XKSA1 SP000925210, the device is offered in Tube Packaging, the device has a TO-220-2 of Package Case, it has an Operating Temperature Junction range of -55°C ~ 175°C, and the Mounting Style is Through Hole, and Mounting Type is Through Hole, and the Diode Type is Silicon Carbide Schottky, and Current Reverse Leakage Vr is 550μA @ 650V, and the Current Average Rectified Io is 16A (DC), and Capacitance Vr F is 470pF @ 1V, 1MHz.
The IDH16G65C5XKSA1 is Schottky Diodes & Rectifiers SIC DIODES, that includes Single Configuration, they are designed to operate with a 16 A If Forward Current, Ifsm Forward Surge Current is shown on datasheet note for use in a 124 A, that offers Ir Reverse Current features such as 200 uA, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, the device can also be used as Through Hole Mounting Style. In addition, the Package Case is TO-220-2, the device is offered in Tube Packaging, the device has a IDH16G65C5 IDH16G65C5XK SP000925210 of Part Aliases, and Pd Power Dissipation is 129 W, and the Product is Schottky Silicon Carbide Diodes, and Series is IDH16G65, and the Technology is SiC, and Unit Weight is 0.211644 oz, and the Vf Forward Voltage is 1.5 V, and Vr Reverse Voltage is 650 V, and the Vrrm Repetitive Reverse Voltage is 650 V.
The IDH15S120AKSA1 is DIODE SCHOTTKY 1200V 15A TO220-2, that includes Tube Packaging, they are designed to operate with a TO-220-2 Package Case, Mounting Type is shown on datasheet note for use in a Through Hole, that offers Series features such as thinQ!?, Diode Type is designed to work in Silicon Carbide Schottky, as well as the PG-TO220-2 Supplier Device Package, the device can also be used as No Recovery Time > 500mA (Io) Speed. In addition, the Capacitance Vr F is 750pF @ 1V, 1MHz, it has an Operating Temperature Junction range of -55°C ~ 175°C, the device has a 360μA @ 1200V of Current Reverse Leakage Vr, and Current Average Rectified Io is 15A (DC), and the Voltage DC Reverse Vr Max is 1200V (1.2kV), and Voltage Forward Vf Max If is 1.8V @ 15A, and the Reverse Recovery Time trr is 0ns.
