The 10EZ47 parts are Silicon 10 WATT Zener Diodes, manufactured by MICROSEMI are available for purchase at 9icnet Electronics. Here you can find various types and values of electronic parts from the world's leading manufacturers. The 10EZ47 components of 9icnet Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.
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The 10ETS12STRL is DIODE GEN PURP 1.2KV 10A D2PAK, that includes Tape & Reel (TR) Packaging, they are designed to operate with a TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Package Case, Mounting Type is shown on datasheet note for use in a Surface Mount, that offers Supplier Device Package features such as TO-263AB (D2PAK), Speed is designed to work in Standard Recovery >500ns, > 200mA (Io), as well as the Standard Diode Type, the device can also be used as 50μA @ 1200V Current Reverse Leakage Vr. In addition, the Voltage Forward Vf Max If is 1.1V @ 10A, the device is offered in 1200V (1.2kV) Voltage DC Reverse Vr Max, the device has a 10A of Current Average Rectified Io, it has an Operating Temperature Junction range of -40°C ~ 150°C.
The 10ETS12STRR is DIODE GEN PURP 1.2KV 10A D2PAK, that includes 1.1V @ 10A Voltage Forward Vf Max If, they are designed to operate with a 1200V (1.2kV) Voltage DC Reverse Vr Max, Supplier Device Package is shown on datasheet note for use in a TO-263AB (D2PAK), that offers Speed features such as Standard Recovery >500ns, > 200mA (Io), Packaging is designed to work in Tape & Reel (TR), as well as the TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Package Case, it has an Operating Temperature Junction range of -40°C ~ 150°C. In addition, the Mounting Type is Surface Mount, the device is offered in Standard Diode Type, the device has a 50μA @ 1200V of Current Reverse Leakage Vr, and Current Average Rectified Io is 10A.
The 10ETS12S is DIODE GEN PURP 1.2KV 10A D2PAK, that includes 10A Current Average Rectified Io, they are designed to operate with a 50μA @ 1200V Current Reverse Leakage Vr, Diode Type is shown on datasheet note for use in a Standard, that offers Mounting Type features such as Surface Mount, it has an Operating Temperature Junction range of -40°C ~ 150°C, as well as the TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Package Case, the device can also be used as Tube Packaging. In addition, the Speed is Standard Recovery >500ns, > 200mA (Io), the device is offered in TO-263AB (D2PAK) Supplier Device Package, the device has a 1200V (1.2kV) of Voltage DC Reverse Vr Max, and Voltage Forward Vf Max If is 1.1V @ 10A.
The 10ETS12FP is DIODE GEN PURP 1.2KV 10A TO220FP, that includes Tube Packaging, they are designed to operate with a TO-220AC Full Pack Supplier Device Package, Package Case is shown on datasheet note for use in a TO-220-2 Full Pack, that offers Mounting Type features such as Through Hole, Speed is designed to work in Standard Recovery >500ns, > 200mA (Io), as well as the Standard Diode Type, the device can also be used as 50μA @ 1200V Current Reverse Leakage Vr, it has an Operating Temperature Junction range of -40°C ~ 150°C, the device is offered in 1200V (1.2kV) Voltage DC Reverse Vr Max, the device has a 10A of Current Average Rectified Io, and Voltage Forward Vf Max If is 1.1V @ 10A.
