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The BF 1009S E6327 is RF MOSFET Transistors Silicon N-Channel MOSFET Tetrode, that includes BF1009 Series, they are designed to operate with a RF Small Signal MOSFET Type, Packaging is shown on datasheet note for use in a Reel, that offers Part Aliases features such as BF1009SE6327HTSA1 SP000010955, Mounting Style is designed to work in SMD/SMT, as well as the SOT-143 Package Case, the device can also be used as Si Technology. In addition, the Gain is 1 GHz, the device is offered in 200 mW Output Power, the device has a 200 mW of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Vgs Gate Source Voltage is 8 V 10 V, and the Id Continuous Drain Current is 0.025 A, and Vds Drain Source Breakdown Voltage is 12 V, and the Transistor Polarity is N-Channel, and Forward Transconductance Min is 26 mS.
The BF 1005S E6327 is RF MOSFET Transistors Silicon N-Channel MOSFET Tetrode, that includes 3 V Vgs Gate Source Voltage, they are designed to operate with a 8 V Vds Drain Source Breakdown Voltage, Type is shown on datasheet note for use in a RF Small Signal MOSFET, that offers Transistor Polarity features such as N-Channel, Technology is designed to work in Si, as well as the BF1005 Series, the device can also be used as 200 mW Pd Power Dissipation. In addition, the Part Aliases is BF1005SE6327HTSA1 SP000010949, the device is offered in Reel Packaging, the device has a SOT-143 of Package Case, and Output Power is 200 mW, and the Mounting Style is SMD/SMT, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and Id Continuous Drain Current is 0.025 A, and the Gain is 1 GHz, and Forward Transconductance Min is 26 mS.
The BF 2030 E6814 is RF MOSFET Transistors Silicon N Channel MOSFET Tetrode, that includes 0.04 A Id Continuous Drain Current, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in SOT-143, as well as the Reel Packaging, the device can also be used as BF2030E6814HTSA1 SP000012219 Part Aliases. In addition, the Pd Power Dissipation is 200 mW, the device is offered in BF2030 Series, the device has a Si of Technology, and Transistor Polarity is N-Channel, and the Type is RF Small Signal MOSFET, and Vds Drain Source Breakdown Voltage is 8 V, and the Vgs Gate Source Voltage is 6 V.
BEZ900-IP with EDA / CAD Models, that includes Rectangular 80.50mm x 48.50mm Outside Dim, NEMA 4X, IP67 Specifications, they are designed to operate with a Bezel, Brackets, Gasket, Hardware Includes, Accessory Type is shown on datasheet note for use in a Bezel, that offers For Use With Related Products features such as 900 Series, Series is designed to work in 900.
