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The 1N5419 is DIODE GEN PURP 500V 3A B-MELF, that includes Fast Recovery Rectifiers Product, they are designed to operate with a Bulk Packaging, Mounting Style is shown on datasheet note for use in a Axial, it has an Operating Temperature Range range of - 65 C to + 175 C, Package Case is designed to work in SQ-MELF, B, as well as the Through Hole Mounting Type, the device can also be used as B, SQ-MELF Supplier Device Package. In addition, the Configuration is Single, the device is offered in Fast Recovery = 200mA (Io) Speed, the device has a Standard of Diode Type, and Current Reverse Leakage Vr is 1μA @ 500V, and the Voltage Forward Vf Max If is 1.5V @ 9A, and Voltage DC Reverse Vr Max is 500V, and the Current Average Rectified Io is 3A, and Reverse Recovery Time trr is 250ns, it has an Operating Temperature Junction range of -65°C ~ 175°C, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 65 C, and Vf Forward Voltage is 1.1 V, and the Vr Reverse Voltage is 500 V, and Ir Reverse Current is 20 uA, and the If Forward Current is 4.5 A, and Max Surge Current is 150 A, and the Recovery Time is 250 ns.
The 1N5420 is DIODE GEN PURP 600V 3A B-MELF, that includes 600 V Vr Reverse Voltage, they are designed to operate with a 1.5V @ 9A Voltage Forward Vf Max If, Voltage DC Reverse Vr Max is shown on datasheet note for use in a 600V, that offers Vf Forward Voltage features such as 1.1 V, Supplier Device Package is designed to work in B, SQ-MELF, as well as the Fast Recovery = 200mA (Io) Speed, the device can also be used as 400ns Reverse Recovery Time trr. In addition, the Recovery Time is 400 ns, the device is offered in Fast Recovery Rectifiers Product, the device has a Bulk of Packaging, and Package Case is SQ-MELF, B, it has an Operating Temperature Range range of - 65 C to + 175 C, it has an Operating Temperature Junction range of -65°C ~ 175°C, and the Mounting Style is Axial, and Mounting Type is Through Hole, it has an Minimum Operating Temperature range of - 65 C, and Max Surge Current is 150 A, it has an Maximum Operating Temperature range of + 175 C, and Ir Reverse Current is 20 uA, and the If Forward Current is 4.5 A, and Diode Type is Standard, and the Current Reverse Leakage Vr is 1μA @ 600V, and Current Average Rectified Io is 3A, and the Configuration is Single.
The 1N5418US is DIODE GEN PURP 400V 3A D5B, that includes 3A Current Average Rectified Io, they are designed to operate with a 1μA @ 400V Current Reverse Leakage Vr, Diode Type is shown on datasheet note for use in a Standard, that offers Mounting Type features such as Surface Mount, Mounting Style is designed to work in SMD/SMT, it has an Operating Temperature Junction range of -65°C ~ 175°C, the device can also be used as E-MELF Package Case. In addition, the Packaging is Bulk, the device is offered in 150ns Reverse Recovery Time trr, the device has a Fast Recovery = 200mA (Io) of Speed, and Supplier Device Package is D-5B, and the Voltage DC Reverse Vr Max is 400V, and Voltage Forward Vf Max If is 1.5V @ 9A.
The 1N5419US is DIODE GEN PURP 500V 3A D5B, that includes Surface Mount Mounting Type, they are designed to operate with a Standard Diode Type, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Speed features such as Fast Recovery = 200mA (Io), Package Case is designed to work in E-MELF, as well as the D-5B Supplier Device Package, the device can also be used as Bulk Packaging, it has an Operating Temperature Junction range of -65°C ~ 175°C, the device is offered in 500V Voltage DC Reverse Vr Max, the device has a 3A of Current Average Rectified Io, and Reverse Recovery Time trr is 250ns, and the Current Reverse Leakage Vr is 1μA @ 500V, and Voltage Forward Vf Max If is 1.5V @ 9A.
