9icnet provides you with BPX 61 designed and produced by OSRAM Opto Semiconductors Inc., which is sold in 9icnet on the spot, and can be purchased through channels such as the original factory and agents. BPX 61 price reference $12.47000. OSRAM Opto Semiconductors Inc. BPX 61 Package/Specification: SENSOR PHOTODIODE 850NM TO39-2. You can download BPX 61 english data, pin diagram, Datasheet data sheet function manual, the data contains detailed pin diagrams of diode rectifiers, application circuit diagrams of functions, voltages, usage methods and tutorials.
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The BPX 43-5 is PHOTOTRANSISTOR TO-18, that includes Phototransistors Product, they are designed to operate with a Silicon NPN Phototransistor Type, Packaging is shown on datasheet note for use in a Tape & Reel (TR), that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-206AA, TO-18-3 Metal Can, it has an Operating Temperature range of -40°C ~ 125°C (TA), the device can also be used as PCB, Through Hole Mounting Type. In addition, the Power Max is 220mW, the device is offered in 50mA Current Collector Ic Max, the device has a 50V of Voltage Collector Emitter Breakdown Max, and Orientation is Top View, and the Wavelength is 880nm, and Viewing Angle is 30°, and the Pd Power Dissipation is 220 mW, it has an Maximum Operating Temperature range of + 125 C, it has an Minimum Operating Temperature range of - 40 C, and Collector Emitter Voltage VCEO Max is 50 V, and the Fall Time is 18 us, and Rise Time is 18 us, and the Collector Emitter Saturation Voltage is 260 mV, and Part # Aliases is Q62702P0016S005, and the Dark Current is 20 nA, and Maximum On State Collector Current is 50 mA, and the Collector Emitter Breakdown Voltage is 50 V, and Light Current is 3.2 mA.
The BPX 43-4 is PHOTOTRANSISTOR NPN 880NM TO-18, that includes 880nm Wavelength, they are designed to operate with a 50V Voltage Collector Emitter Breakdown Max, Viewing Angle is shown on datasheet note for use in a 30°, that offers Type features such as Silicon NPN Phototransistor, Rise Time is designed to work in 15 us, as well as the Phototransistors Product, the device can also be used as 220mW Power Max. In addition, the Pd Power Dissipation is 220 mW, the device is offered in Q62702P0016S004 Part # Aliases, the device has a Bulk of Packaging, and Package Case is TO-206AA, TO-18-3 Metal Can, and the Orientation is Top View, it has an Operating Temperature range of -40°C ~ 125°C (TA), and the Mounting Style is Through Hole, and Mounting Type is Through Hole, it has an Minimum Operating Temperature range of - 40 C, it has an Maximum Operating Temperature range of + 125 C, and the Maximum On State Collector Current is 50 mA, and Light Current is 4 mA, and the Fall Time is 15 us, and Dark Current is 20 nA, and the Current Dark Id Max is 20nA, and Current Collector Ic Max is 50mA, and the Collector Emitter Voltage VCEO Max is 50 V, and Collector Emitter Saturation Voltage is 240 mV, and the Collector Emitter Breakdown Voltage is 50 V.
The BPX 43-4/5 is PHOTOTRANSISTOR NPN 880NM TO-18, that includes 50 V Collector Emitter Breakdown Voltage, they are designed to operate with a 260 mV Collector Emitter Saturation Voltage, Collector Emitter Voltage VCEO Max is shown on datasheet note for use in a 50 V, that offers Dark Current features such as 20 nA, Fall Time is designed to work in 18 us, as well as the 2 mA Light Current, the device can also be used as 50 mA Maximum On State Collector Current, it has an Maximum Operating Temperature range of + 125 C, it has an Minimum Operating Temperature range of - 40 C, the device has a Through Hole of Mounting Style, and Package Case is TO-18, and the Packaging is Reel, and Part # Aliases is Q62702P3582, and the Pd Power Dissipation is 220 mW, and Product is Phototransistors, and the Rise Time is 18 us, and Type is Silicon NPN Phototransistor, and the Wavelength is 880 nm.
