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The SCT2450KEC is MOSFET N-CH 1200V 10A TO-247, that includes SCT2450KE Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 1.340411 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-247-3, as well as the SiC Technology, it has an Operating Temperature range of 175°C (TJ). In addition, the Mounting Type is Through Hole, the device is offered in 1 Channel Number of Channels, the device has a TO-247 of Supplier Device Package, and Configuration is Single, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 85W, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 1200V (1.2kV), and the Input Capacitance Ciss Vds is 463pF @ 800V, and FET Feature is Silicon Carbide (SiC), and the Current Continuous Drain Id 25°C is 10A (Tc), and Rds On Max Id Vgs is 585 mOhm @ 3A, 18V, and the Vgs th Max Id is 4V @ 900μA, and Gate Charge Qg Vgs is 27nC @ 18V, and the Pd Power Dissipation is 85 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 34 ns, and the Rise Time is 17 ns, and Vgs Gate Source Voltage is - 6 V to + 22 V, and the Id Continuous Drain Current is 10 A, and Vds Drain Source Breakdown Voltage is 1200 V, and the Vgs th Gate Source Threshold Voltage is 1.6 V to 4 V, and Rds On Drain Source Resistance is 450 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 38 ns, and the Typical Turn On Delay Time is 19 ns, and Qg Gate Charge is 27 nC, and the Forward Transconductance Min is 1 S.
The SCT2H12NZGC11 is MOSFET 1700V 3.7A N-MOSFET Silicon Carbide SiC, that includes 1.6 V Vgs th Gate Source Threshold Voltage, they are designed to operate with a - 6 V to + 22 V Vgs Gate Source Voltage, Vds Drain Source Breakdown Voltage is shown on datasheet note for use in a 1.7 kV, that offers Typical Turn On Delay Time features such as 16 ns, Typical Turn Off Delay Time is designed to work in 35 ns, as well as the N-Channel Transistor Polarity, the device can also be used as SiC Technology. In addition, the Rise Time is 21 ns, the device is offered in 1.5 Ohms Rds On Drain Source Resistance, the device has a 14 nC of Qg Gate Charge, and Pd Power Dissipation is 35 W, and the Packaging is Tube, and Package Case is TO-3PFM, and the Number of Channels is 1 Channel, and Mounting Style is Through Hole, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 175 C, and the Id Continuous Drain Current is 3.7 A, and Forward Transconductance Min is 0.4 S, and the Fall Time is 74 ns, and Configuration is Single, and the Channel Mode is Enhancement.
The SCT250-250 is COPPER T SPLICE LONG BARREL, that includes Non-Insulated Insulation, they are designed to operate with a 3 Number of Wire Entries, Packaging is shown on datasheet note for use in a Bulk, that offers Series features such as Pan-LugR, Terminal Type is designed to work in T-Splice, Tap, as well as the Crimp Termination, the device can also be used as 250 MCM (kcmil) Wire Gauge.
