9icnet provides you with NDHN3G2 designed and produced by other, which is sold in 9icnet on the spot, and can be purchased through channels such as the original factory and agents. NDHN3G2 price reference $13.65000. other NDHN3G2 Package/Specification: RECTANGULAR PUSH PULL IP67 INDUS. You can download NDHN3G2 english data, pin diagram, Datasheet data sheet function manual, the data contains detailed pin diagrams of diode rectifiers, application circuit diagrams of functions, voltages, usage methods and tutorials.
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HN3C51F-GR(TE85L,F with pin details, that includes Digi-ReelR Alternate Packaging Packaging, they are designed to operate with a SC-74, SOT-457 Package Case, Mounting Type is shown on datasheet note for use in a Surface Mount, that offers Supplier Device Package features such as SM6, Power Max is designed to work in 300mW, as well as the 2 NPN (Dual) Transistor Type, the device can also be used as 100mA Current Collector Ic Max. In addition, the Voltage Collector Emitter Breakdown Max is 120V, the device is offered in 200 @ 2mA, 6V DC Current Gain hFE Min Ic Vce, the device has a 300mV @ 1mA, 10mA of Vce Saturation Max Ib Ic, and Current Collector Cutoff Max is 100nA (ICBO), and the Frequency Transition is 100MHz.
HN3C51F-BL(TE85L,F with user guide, that includes 120V Voltage Collector Emitter Breakdown Max, they are designed to operate with a 300mV @ 1mA, 10mA Vce Saturation Max Ib Ic, Transistor Type is shown on datasheet note for use in a 2 NPN (Dual), that offers Supplier Device Package features such as SM6, Power Max is designed to work in 300mW, as well as the Digi-ReelR Packaging, the device can also be used as SC-74, SOT-457 Package Case. In addition, the Mounting Type is Surface Mount, the device is offered in 100MHz Frequency Transition, the device has a 350 @ 2mA, 6V of DC Current Gain hFE Min Ic Vce, and Current Collector Ic Max is 100mA, and the Current Collector Cutoff Max is 100nA (ICBO).
HN3C51F-GR with circuit diagram manufactured by TOSHIBA. The HN3C51F-GR is available in SOT23-6 Package, is part of the Transistors (BJT) - Arrays.
HN3C67FE with EDA / CAD Models manufactured by TOSHIBA. The HN3C67FE is available in SOT563 Package, is part of the IC Chips.
