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The PHKD6N02LT,518 is MOSFET 2N-CH 20V 10.9A SOT96-1, that includes TrenchMOS? Series, they are designed to operate with a Tape & Reel (TR) Packaging, Package Case is shown on datasheet note for use in a 8-SOIC (0.154", 3.90mm Width), it has an Operating Temperature range of -55°C ~ 150°C (TJ), Mounting Type is designed to work in Surface Mount, as well as the 8-SO Supplier Device Package, the device can also be used as 2 N-Channel (Dual) FET Type. In addition, the Power Max is 4.17W, the device is offered in 20V Drain to Source Voltage Vdss, the device has a 950pF @ 10V of Input Capacitance Ciss Vds, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 10.9A, and Rds On Max Id Vgs is 20 mOhm @ 3A, 5V, and the Vgs th Max Id is 1.5V @ 250μA, and Gate Charge Qg Vgs is 15.3nC @ 5V.
The PHKD6N02LT is MOSFET 2N-CH 20V 10.9A SOT96-1 manufactured by NXP. The PHKD6N02LT is available in 8-SOIC (0.154", 3.90mm Width) Package, is part of the FETs - Arrays, , and with support for MOSFET 2N-CH 20V 10.9A SOT96-1.
PHKD6N2 with circuit diagram manufactured by NXP. The PHKD6N2 is available in SOP8 Package, is part of the IC Chips.
