9icnet provides you with SIB-109-02-F-S designed and produced by Samtec Inc., which is sold in 9icnet on the spot, and can be purchased through channels such as the original factory and agents. SIB-109-02-F-S price reference $9.10000. Samtec Inc. SIB-109-02-F-S Package/Specification: CONN SPRING MOD 9POS SMD. You can download SIB-109-02-F-S english data, pin diagram, Datasheet data sheet function manual, the data contains detailed pin diagrams of diode rectifiers, application circuit diagrams of functions, voltages, usage methods and tutorials.
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The SIA975DJ-T1-GE3 is MOSFET 2P-CH 12V 4.5A SC-70-6, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SIA975DJ-GE3, that offers Unit Weight features such as 0.000988 oz, Mounting Style is designed to work in SMD/SMT, as well as the PowerPAKR SC-70-6 Dual Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 2 Channel of Number of Channels, and Supplier Device Package is PowerPAKR SC-70-6 Dual, and the Configuration is Dual, and FET Type is 2 P-Channel (Dual), and the Power Max is 7.8W, and Transistor Type is 2 P-Channel, and the Drain to Source Voltage Vdss is 12V, and Input Capacitance Ciss Vds is 1500pF @ 6V, and the FET Feature is Logic Level Gate, and Current Continuous Drain Id 25°C is 4.5A, and the Rds On Max Id Vgs is 41 mOhm @ 4.3A, 4.5V, and Vgs th Max Id is 1V @ 250μA, and the Gate Charge Qg Vgs is 26nC @ 8V, and Pd Power Dissipation is 7.8 W, it has an Maximum Operating Temperature range of + 125 C, it has an Minimum Operating Temperature range of - 55 C, and the Vgs Gate Source Voltage is 8 V, and Id Continuous Drain Current is - 4.5 A, and the Vds Drain Source Breakdown Voltage is - 12 V, and Vgs th Gate Source Threshold Voltage is - 1 V, and the Rds On Drain Source Resistance is 41 mOhms, and Transistor Polarity is P-Channel, and the Qg Gate Charge is 17 nC, and Forward Transconductance Min is 12 S.
The SIA950DJ-T1-GE3 is MOSFET 2N-CH 190V 0.95A SC-70-6, that includes 1.4V @ 250μA Vgs th Max Id, they are designed to operate with a PowerPAKR SC-70-6 Dual Supplier Device Package, Series is shown on datasheet note for use in a LITTLE FOOTR, that offers Rds On Max Id Vgs features such as 3.8 Ohm @ 360mA, 4.5V, Power Max is designed to work in 7W, as well as the Digi-ReelR Packaging, the device can also be used as PowerPAKR SC-70-6 Dual Package Case, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 90pF @ 100V of Input Capacitance Ciss Vds, and Gate Charge Qg Vgs is 4.5nC @ 10V, and the FET Type is 2 N-Channel (Dual), and FET Feature is Logic Level Gate, and the Drain to Source Voltage Vdss is 190V, and Current Continuous Drain Id 25°C is 950mA.
The SIAERO+-EVB is BOARD EVAL FOR AERO+, that includes Aero?+ Series, they are designed to operate with a Board Supplied Contents, Type is shown on datasheet note for use in a GPRS/GSM.
SIA972DH-T1-GE3 with EDA / CAD Models manufactured by VISHAY. The SIA972DH-T1-GE3 is available in SOT-363 Package, is part of the IC Chips.
