Feature
- NPN Silicon Microwave Power Transistors
- Gold Metallization System
- Diffused Emitter Ballasting Resistors
- High Efficiency Interdigitated Geometry
- RoHS Compliant
- Broadband Class C Operation
- Common Base Configuration
- Hermetic Metal/Ceramic Package
- Internal Input and Output Impedance Matching
- Aerospace and Defense
Applications
- Gain: 8.8 dB
- Efficiency: 45 %
- Pout: 380 W
- Min Frequency: 1,200 MHz
- Max Frequency: 1,400 MHz