9icnet provides you with MID400M designed and produced by onsemi, which is sold in 9icnet on the spot, and can be purchased through channels such as the original factory and agents. MID400M price reference $3.06460. onsemi MID400M Package/Specification: OPTOISO 2.5KV OPN COLLECTOR 8DIP. You can download MID400M english data, pin diagram, Datasheet data sheet function manual, the data contains detailed pin diagrams of diode rectifiers, application circuit diagrams of functions, voltages, usage methods and tutorials.
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The MID300-12A4 is MOD IGBT RBSOA 1200V 330A Y3-DCB, that includes MID300 Series, they are designed to operate with a IGBT Silicon Modules Product, Packaging is shown on datasheet note for use in a Bulk, that offers Mounting Style features such as Screw, Package Case is designed to work in Y3-DCB, as well as the Chassis Mount Mounting Type, the device can also be used as Y3-DCB Supplier Device Package. In addition, the Input is Standard, the device is offered in Single Configuration, the device has a 1380W of Power Max, and Current Collector Ic Max is 330A, and the Voltage Collector Emitter Breakdown Max is 1200V, and Current Collector Cutoff Max is 13mA, and the IGBT Type is NPT, and Vce on Max Vge Ic is 2.7V @ 15V, 200A, and the Input Capacitance Cies Vce is 13nF @ 25V, and NTC Thermistor is No, and the Pd Power Dissipation is 1.38 kW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 40 C, and Collector Emitter Voltage VCEO Max is 1.2 kV, and the Collector Emitter Saturation Voltage is 1.2 kV, and Continuous Collector Current at 25 C is 330 A, and the Gate Emitter Leakage Current is 800 nA, and Maximum Gate Emitter Voltage is +/- 20 V.
The MID200-12A4 is MOD IGBT RBSOA 1200V 270A Y3-DCB, that includes 1200V Voltage Collector Emitter Breakdown Max, they are designed to operate with a 2.7V @ 15V, 150A Vce on Max Vge Ic, Supplier Device Package is shown on datasheet note for use in a Y3-DCB, that offers Series features such as MID200, Product is designed to work in IGBT Silicon Modules, as well as the 1130W Power Max, the device can also be used as Bulk Packaging. In addition, the Package Case is Y3-DCB, the device is offered in No NTC Thermistor, the device has a Screw of Mounting Style, and Mounting Type is Chassis Mount, it has an Minimum Operating Temperature range of - 40 C, it has an Maximum Operating Temperature range of + 150 C, and the Maximum Gate Emitter Voltage is +/- 20 V, and Input Capacitance Cies Vce is 11nF @ 25V, and the Input is Standard, and IGBT Type is NPT, and the Current Collector Ic Max is 270A, and Current Collector Cutoff Max is 10mA, and the Continuous Collector Current at 25 C is 270 A, and Configuration is Single, and the Collector Emitter Voltage VCEO Max is 1200 V.
MID25N03ASTR with circuit diagram manufactured by MAGEPOWER. The MID25N03ASTR is available in TO-263 Package, is part of the IC Chips.
