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GD25Q16ETIGR

  • 描述:存储类型: Non-Volatile 存储格式: FLASH 存储容量: 16Mb (2M x 8) 电源电压: 2.7伏~3.6伏 时钟频率: 133兆赫 供应商设备包装: 8-SOP
  • 品牌: 兆易创新 (GigaDevice)
  • 交期:2-3 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

  • 库存: 26677
  • 单价: ¥1.44279
  • 数量:
    - +
  • 总计: ¥1.44
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规格参数

  • 部件状态 可供货
  • 存储类型 Non-Volatile
  • 存储格式 FLASH
  • 技术 FLASH-NOR
  • 存储接口 SPI-四路I/O
  • 电源电压 2.7伏~3.6伏
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 包装/外壳 8-SOIC (0.154", 3.90毫米 Width)
  • 供应商设备包装 8-SOP
  • 存储容量 16Mb (2M x 8)
  • 时钟频率 133兆赫
  • 制造厂商 兆易创新 (GigaDevice)
  • 单字、单页写入耗时 70s, 2ms
  • 访达时期 7 ns

GD25Q16ETIGR 产品详情

25Q16BSIG FEATURES ◆ 16M-bit Serial Flash -2048K-byte -256 bytes per programmable page ◆ Standard, Dual, Quad SPI -Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD# -Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD# -Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3 ◆ High Speed Clock Frequency -120MHz for fast read with 30PF load -Dual I/O Data transfer up to 180Mbits/s -Quad I/O Data transfer up to 360Mbits/s ◆ Program/Erase Speed -Page Program time: 0.7ms typical -Sector Erase time: 100ms typical -Block Erase time: 0.3/0.4/0.8s typical -Chip Erase time: 16s typical ◆ Flexible Architecture -Sector of 4K-byte -Block of 32/64/128K-byte ◆ Low Power Consumption -20mA maximum active current -5uA maximum power down current ◆ Software/Hardware Write Protection -Write protect all/portion of memory via software -Enable/Disable protection with WP# Pin -Top or Bottom, Sector or Block selection ◆ Minimum 100,000 Program/Erase Cycles Note: 1.Please contact Gigadevice for details. ◆ Advanced security Features(1) -16-Bit Customer ID -Security Architecture ◆ Single Power Supply Voltage -Full voltage range:2.7~3.6V GENERAL DESCRIPTION The GD25Q16 (16M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and supports the Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), and I/O3 (HOLD#). The Dual I/O data is transferred with speed of 180Mbits/s and the Quad I/O & Quad output data is transferred with speed of 360Mbits/s. CONNECTION DIAGRAM CS# 1 8 SO WP# 27 Top View 36 VSS 45 8–LEAD SOP/DIP VCC HOLD# SCLK SI 1 Uniform Sector Dual and Quad Serial Flash PIN DESCRIPTION Pin Name I/O CS# I SO (IO1) I/O WP# (IO2) I/O VSS SI (IO0) I/O SCLK I HOLD# (IO3) I/O VCC Description Chip Select Input Data Output (Data Input Output 1) Write Protect Input (Data Input Output 2) Ground Data Input (Data Input Output 0) Serial Clock Input Hold Input (Data Input Output 3) Power Supply BLOCK DIAGRAM WP#(IO2) Write Control Logic HOLD#(IO3) SCLK CS# SI(IO0) SO(IO1) SPI Command & Control Logic Write Protect Logic and Row Decode Status Register High Voltage Generators Flash Memory Page Address Latch/Counter Column Decode And 256-Byte Page Buffer Byte Address Latch/Counter GD25Q16 2 Uniform Sector Dual and Quad Serial Flash GD25Q16 MEMORY ORGANIZATION Each device has Each block has 2M 128/64/32K 8K 512/256/128 512 32/16/8 16/32/64 – Each sector has 4K 16 – Each page has 256 – bytes pages sectors blocks UNIFORM BLOCK SECTOR ARCHITECTURE GD25Q16 64K Bytes Block Sector Architecture Block Sector 31 30 511 496 495 480 47 2 32 31 1 16 15 0 0 Address range 1FF000H 1F0000H 1EF000H 1E0000H 02F000H 020000H 01F000H 010000H 00F000H 000000H 1FFFFFH 1F0FFFH 1EFFFFH 1E0FFFH ��

25Q16BSIG FEATURES ◆ 16M-bit Serial Flash -2048K-byte -256 bytes per programmable page ◆ Standard, Dual, Quad SPI -Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD# -Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD# -Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3 ◆ High Speed Clock Frequency -120MHz for fast read with 30PF load -Dual I/O Data transfer up to 180Mbits/s -Quad I/O Data transfer up to 360Mbits/s ◆ Program/Erase Speed -Page Program time: 0.7ms typical -Sector Erase time: 100ms typical -Block Erase time: 0.3/0.4/0.8s typical -Chip Erase time: 16s typical ◆ Flexible Architecture -Sector of 4K-byte -Block of 32/64/128K-byte ◆ Low Power Consumption -20mA maximum active current -5uA maximum power down current ◆ Software/Hardware Write Protection -Write protect all/portion of memory via software -Enable/Disable protection with WP# Pin -Top or Bottom, Sector or Block selection ◆ Minimum 100,000 Program/Erase Cycles Note: 1.Please contact Gigadevice for details. ◆ Advanced security Features(1) -16-Bit Customer ID -Security Architecture ◆ Single Power Supply Voltage -Full voltage range:2.7~3.6V GENERAL DESCRIPTION The GD25Q16 (16M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and supports the Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), and I/O3 (HOLD#). The Dual I/O data is transferred with speed of 180Mbits/s and the Quad I/O & Quad output data is transferred with speed of 360Mbits/s. CONNECTION DIAGRAM CS# 1 8 SO WP# 27 Top View 36 VSS 45 8–LEAD SOP/DIP VCC HOLD# SCLK SI 1 Uniform Sector Dual and Quad Serial Flash PIN DESCRIPTION Pin Name I/O CS# I SO (IO1) I/O WP# (IO2) I/O VSS SI (IO0) I/O SCLK I HOLD# (IO3) I/O VCC Description Chip Select Input Data Output (Data Input Output 1) Write Protect Input (Data Input Output 2) Ground Data Input (Data Input Output 0) Serial Clock Input Hold Input (Data Input Output 3) Power Supply BLOCK DIAGRAM WP#(IO2) Write Control Logic HOLD#(IO3) SCLK CS# SI(IO0) SO(IO1) SPI Command & Control Logic Write Protect Logic and Row Decode Status Register High Voltage Generators Flash Memory Page Address Latch/Counter Column Decode And 256-Byte Page Buffer Byte Address Latch/Counter GD25Q16 2 Uniform Sector Dual and Quad Serial Flash GD25Q16 MEMORY ORGANIZATION Each device has Each block has 2M 128/64/32K 8K 512/256/128 512 32/16/8 16/32/64 – Each sector has 4K 16 – Each page has 256 – bytes pages sectors blocks UNIFORM BLOCK SECTOR ARCHITECTURE GD25Q16 64K Bytes Block Sector Architecture Block Sector 31 30 511 496 495 480 47 2 32 31 1 16 15 0 0 Address range 1FF000H 1F0000H 1EF000H 1E0000H 02F000H 020000H 01F000H 010000H 00F000H 000000H 1FFFFFH 1F0FFFH 1EFFFFH 1E0FFFH ��

GD25Q16ETIGR所属分类:存储器,GD25Q16ETIGR 由 兆易创新 (GigaDevice) 设计生产,可通过久芯网进行购买。GD25Q16ETIGR价格参考¥1.442786,你可以下载 GD25Q16ETIGR中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询GD25Q16ETIGR规格参数、现货库存、封装信息等信息!

兆易创新 (GigaDevice)

兆易创新 (GigaDevice)

GigaDevice于2005年在硅谷成立,是一家领先的无晶圆厂半导体公司,从事先进的存储技术和IC解决方案。该公司已于2016年成功完成在上海证券交易所的首次公开募股。GigaDevice提供多种高性...

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