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47L16-I/ST

  • 描述:存储类型: Non-Volatile 存储格式: EERAM 存储容量: 16Kb (2K x 8) 电源电压: 2.7伏~3.6伏 时钟频率: 1兆赫 供应商设备包装: 8-TSSOP
  • 品牌: 美国微芯 (MICROCHIP)
  • 交期:2-3 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

  • 库存: 0
  • 单价: ¥3.15283
  • 数量:
    - +
  • 总计: ¥3.15
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规格参数

  • 部件状态 可供货
  • 存储类型 Non-Volatile
  • 电源电压 2.7伏~3.6伏
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 制造厂商 美国微芯 (MICROCHIP)
  • 存储接口 IOC
  • 包装/外壳 8-TSSOP (0.173", 4.40毫米 Width)
  • 供应商设备包装 8-TSSOP
  • 存储容量 16Kb (2K x 8)
  • 时钟频率 1兆赫
  • 单字、单页写入耗时 1ms
  • 访达时期 400 ns
  • 存储格式 EERAM
  • 技术 EEPROM,SRAM

47L16-I/ST 产品详情

The 47L16-I/ST from Microchip is a 16Kbit, I2C serial EERAM in 8 pin TSSOP package. This SRAM with EEPROM backup is designed to support a bidirectional two-wire bus and data transmission protocol (I2C). It provides infinite read and write cycles to the SRAM while EEPROM cells provide high-endurance non-volatile storage of data. With an external capacitor, SRAM data is automatically transferred to the EEPROM upon loss of power. Data can also be transferred manually by using either the hardware store pin or software control. Upon power-up, the EEPROM data is automatically recalled to the SRAM. Recall can also be initiated through software control.

Feature

  • VCC range from 2.7V to 3.6V, maximum clock frequency of 1MHz
  • Internally organized as 2,048 x 8bits, store time is 25ms maximum
  • Operating temperature range from -40°C to +85°C
  • Non-volatile external event detect flag, infinite read and write cycles to SRAM
  • More than one million store cycles to EEPROM
  • Data retention is > 200 years, ESD protection is > 4000V
  • Zero cycle delay reads and writes
  • Cascadable up to four devices
  • Schmitt trigger inputs for noise suppression
  • Low power CMOS technology, 200µA active current typical & 40µA standby current (maximum)

Applications

Embedded Design & Development
47L16-I/ST所属分类:存储器,47L16-I/ST 由 美国微芯 (MICROCHIP) 设计生产,可通过久芯网进行购买。47L16-I/ST价格参考¥3.152834,你可以下载 47L16-I/ST中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询47L16-I/ST规格参数、现货库存、封装信息等信息!
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