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The BSM35GD120DN2E3224 is IGBT Modules N-CH 1.2KV 50A, that includes IGBT Silicon Modules Product, they are designed to operate with a Bulk Packaging, Mounting Style is shown on datasheet note for use in a Screw, that offers Configuration features such as Hex, Package Case is designed to work in EconoPACK 2, as well as the 280 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 40 C, the device is offered in 1200 V Collector Emitter Voltage VCEO Max, the device has a 2.7 V of Collector Emitter Saturation Voltage, and Continuous Collector Current at 25 C is 50 A, and the Gate Emitter Leakage Current is 150 nA, and Maximum Gate Emitter Voltage is +/- 20 V.
The BSM35GP120 is IGBT Modules 1200V 35A PIM, that includes IGBT Silicon Modules Product, they are designed to operate with a 230 W Pd Power Dissipation, Package Case is shown on datasheet note for use in a EconoPIM2, that offers Mounting Style features such as Screw, it has an Minimum Operating Temperature range of - 40 C, it has an Maximum Operating Temperature range of + 125 C, the device can also be used as +/- 20 V Maximum Gate Emitter Voltage. In addition, the Gate Emitter Leakage Current is 300 nA, the device is offered in 45 A Continuous Collector Current at 25 C, the device has a Hex of Configuration, and Collector Emitter Voltage VCEO Max is 1200 V, and the Collector Emitter Saturation Voltage is 2.4 V.
The BSM35GP120G is IGBT Modules 1200V 35A PIM, that includes 2.4 V Collector Emitter Saturation Voltage, they are designed to operate with a 1200 V Collector Emitter Voltage VCEO Max, Configuration is shown on datasheet note for use in a Hex, that offers Continuous Collector Current at 25 C features such as 45 A, Gate Emitter Leakage Current is designed to work in 300 nA, as well as the +/- 20 V Maximum Gate Emitter Voltage, it has an Maximum Operating Temperature range of + 125 C, it has an Minimum Operating Temperature range of - 40 C, the device is offered in Screw Mounting Style, the device has a EconoPIM3 of Package Case, and Pd Power Dissipation is 230 W, and the Product is IGBT Silicon Modules.
BSM35GP60 with EDA / CAD Models manufactured by EUPEC. The BSM35GP60 is available in MODULE Package, is part of the Module.