The Microchip Technology Inc. 24AA65/24LC65/24C65 (24XX65)* is a “smart” 8K x 8 Serial ElectricallyErasable PROM. This device has been developed foradvanced, low-power applications such as personalcommunications, and provides the systems designerwith flexibility through the use of many new user-programmablefeatures. The 24XX65 offers a relocatable4K bit block of ultra-high-endurance memory for datathat changes frequently. The remainder of the array, or60K bits, is rated at 1,000,000 erase/write (E/W) cyclesensured. The 24XX65 features an input cache for fastwrite loads with a capacity of eight pages, or 64 bytes.This device also features programmable securityoptions for E/W protection of critical data and/or codeof up to fifteen 4K blocks. Functional address linesallow the connection of up to eight 24XX65’s on thesame bus for up to 512K bits contiguous EEPROMmemory. Advanced CMOS technology makes thisdevice ideal for low-power nonvolatile code and dataapplications. The 24XX65 is available in the standard8-pin plastic DIP and 8-pin surface mount SOIJpackage.
Feature
- Voltage Operating Range: 1.8V to 6.0V- Peak write current 3 mA at 6.0V- Maximum read current 150 µA at 6.0V- Standby current 1 µA, typical
- Industry Standard Two-Wire Bus Protocol I2C™Compatible
- 8-Byte Page, or Byte modes Available
- 2 ms Typical Write Cycle Time, Byte or Page
- 64-Byte Input Cache for Fast Write Loads
- Up to 8 devices may be connected to the samebus for up to 512K bits total memory
- Including 100 kHz (1.8V = Vcc < 4.5V) and 400kHz (4.5V = VCC = 6.0V) Compatibility
- Programmable Block Security Options
- Programmable Endurance Options
- Schmitt Trigger, Filtered Inputs for NoiseSuppression
- Output Slope Control to Eliminate Ground Bounce
- Self-Timed Erase and Write Cycles
- Power-on/off Data Protection Circuitry
- Endurance:- 10,000,000 E/W cycles for a High EnduranceBlock- 1,000,000 E/W cycles for a StandardEndurance Block
- Electrostatic Discharge Protection > 4000V
- Data Retention > 200 years
