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The NTNUS3171PZT5G is MOSFET T1 20V P-CH SOT-1123, that includes NTNUS3171PZ Series, they are designed to operate with a Reel Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as SOT-1123-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 P-Channel, the device is offered in 125 mW Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Id Continuous Drain Current is - 150 mA, and Vds Drain Source Breakdown Voltage is - 20 V, and the Rds On Drain Source Resistance is 3.4 Ohms, and Transistor Polarity is P-Channel, and the Forward Transconductance Min is 0.26 s.
NTNS3A67PZT5G with user guide, that includes 4 V Vgs th Gate Source Threshold Voltage, they are designed to operate with a 1 N-Channel Transistor Type, Technology is shown on datasheet note for use in a Si, that offers Series features such as NTNS3A67PZ, Qg Gate Charge is designed to work in 120 nC, as well as the Reel Packaging, the device can also be used as 1 Channel Number of Channels, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, the device has a 1 N-Channel of Configuration, and Channel Mode is Enhancement.
NTNS3A65PZT5G with circuit diagram, that includes - 281 mA Id Continuous Drain Current, they are designed to operate with a SMD/SMT Mounting Style, Package Case is shown on datasheet note for use in a XDFN3-3, that offers Packaging features such as Reel, Rds On Drain Source Resistance is designed to work in 1.3 Ohms, as well as the NTNS3A65PZ Series, the device can also be used as Si Technology. In addition, the Transistor Polarity is P-Channel, the device is offered in - 20 V Vds Drain Source Breakdown Voltage.
NTNS3A91PZT5G with EDA / CAD Models, that includes XLLGA-3 Package Case, they are designed to operate with a SMD/SMT Mounting Style, Technology is shown on datasheet note for use in a Si, that offers Packaging features such as Reel, Transistor Polarity is designed to work in P-Channel, as well as the NTNS3A91PZ Series, the device can also be used as 1.6 Ohms Rds On Drain Source Resistance. In addition, the Id Continuous Drain Current is - 223 mA, the device is offered in - 20 V Vds Drain Source Breakdown Voltage.
