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The FQN1N50CTA is MOSFET N-CH 500V 380MA TO-92, that includes QFETR Series, they are designed to operate with a Cut Tape (CT) Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.008466 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Through Hole, the device is offered in 1 Channel Number of Channels, the device has a TO-92-3 of Supplier Device Package, and Configuration is Single, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 890mW, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 500V, and the Input Capacitance Ciss Vds is 195pF @ 25V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 380mA (Tc), and Rds On Max Id Vgs is 6 Ohm @ 190mA, 10V, and the Vgs th Max Id is 4V @ 250μA, and Gate Charge Qg Vgs is 6.4nC @ 10V, and the Pd Power Dissipation is 890 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 10 ns, and the Rise Time is 10 ns, and Vgs Gate Source Voltage is 30 V, and the Id Continuous Drain Current is 380 mA, and Vds Drain Source Breakdown Voltage is 500 V, and the Rds On Drain Source Resistance is 4.6 Ohms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 20 ns, and Typical Turn On Delay Time is 10 ns, and the Forward Transconductance Min is 0.6 S, and Channel Mode is Enhancement.
The FQN1N60CTA is MOSFET N-CH 600V 300MA TO-92, that includes 4V @ 250μA Vgs th Max Id, they are designed to operate with a 30 V Vgs Gate Source Voltage, Vds Drain Source Breakdown Voltage is shown on datasheet note for use in a 600 V, that offers Unit Weight features such as 0.008466 oz, Typical Turn On Delay Time is designed to work in 7 ns, as well as the 13 ns Typical Turn Off Delay Time, the device can also be used as 1 N-Channel Transistor Type. In addition, the Transistor Polarity is N-Channel, the device is offered in Si Technology, the device has a TO-92-3 of Supplier Device Package, and Series is QFETR, and the Rise Time is 21 ns, and Rds On Max Id Vgs is 11.5 Ohm @ 150mA, 10V, and the Rds On Drain Source Resistance is 9.3 Ohms, and Power Max is 1W, and the Pd Power Dissipation is 1 W, and Packaging is Cut Tape (CT) Alternate Packaging, and the Package Case is TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), it has an Operating Temperature range of -55°C ~ 150°C (TJ), and the Number of Channels is 1 Channel, and Mounting Style is Through Hole, and the Mounting Type is Through Hole, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and Input Capacitance Ciss Vds is 170pF @ 25V, and the Id Continuous Drain Current is 300 mA, and Gate Charge Qg Vgs is 6.2nC @ 10V, and the Forward Transconductance Min is 0.75 S, and FET Type is MOSFET N-Channel, Metal Oxide, and the FET Feature is Standard, and Fall Time is 27 ns, and the Drain to Source Voltage Vdss is 600V, and Current Continuous Drain Id 25°C is 300mA (Tc), and the Configuration is Single, and Channel Mode is Enhancement.
FQN1N60C with circuit diagram manufactured by FAIRCHILD. The FQN1N60C is available in TO-92 Package, is part of the FETs - Single.
