The J175(2SJ175) parts manufactured by HITACHI are available for purchase at 9icnet Electronics. Here you can find various types and values of electronic parts from the world's leading manufacturers. The J175(2SJ175) components of 9icnet Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.
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The J175 is JFET P-CH 30V 0.35W TO92, that includes Bulk Packaging, they are designed to operate with a 0.016000 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-226-3, TO-92-3 (TO-226AA), Technology is designed to work in Si, as well as the Through Hole Mounting Type, the device can also be used as TO-92-3 Supplier Device Package. In addition, the Configuration is Single, the device is offered in P-Channel FET Type, the device has a 350mW of Power Max, and Voltage Breakdown V BRGSS is 30V, and the Current Drain Idss Vds Vgs=0 is 7mA @ 15V, and Voltage Cutoff VGS off Id is 3V @ 10nA, and the Resistance RDS On is 125 Ohm, and Pd Power Dissipation is 360 mW, and the Id Continuous Drain Current is - 10 nA, and Vds Drain Source Breakdown Voltage is - 15 V, and the Rds On Drain Source Resistance is 85 Ohms, and Transistor Polarity is P-Channel, and the Vgs Gate Source Breakdown Voltage is 30 V, and Gate Source Cutoff Voltage is 6 V.
J174_D27Z with user guide, that includes 5V @ 10nA Voltage Cutoff VGS off Id, they are designed to operate with a 30V Voltage Breakdown V BRGSS, Supplier Device Package is shown on datasheet note for use in a TO-92-3, that offers Resistance RDS On features such as 85 Ohm, Power Max is designed to work in 350mW, as well as the Tape & Reel (TR) Packaging, the device can also be used as TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Package Case. In addition, the Mounting Type is Through Hole, the device is offered in P-Channel FET Type, the device has a 20mA @ 15V of Current Drain Idss Vds Vgs=0.
J174_D74Z with circuit diagram, that includes 20mA @ 15V Current Drain Idss Vds Vgs=0, they are designed to operate with a P-Channel FET Type, Mounting Type is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Packaging is designed to work in Tape & Box (TB), as well as the 350mW Power Max, the device can also be used as 85 Ohm Resistance RDS On. In addition, the Supplier Device Package is TO-92-3, the device is offered in 30V Voltage Breakdown V BRGSS, the device has a 5V @ 10nA of Voltage Cutoff VGS off Id.
J174_D75Z with EDA / CAD Models, that includes TO-92-3 Supplier Device Package, they are designed to operate with a TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Package Case, Mounting Type is shown on datasheet note for use in a Through Hole, that offers Packaging features such as Tape & Box (TB), FET Type is designed to work in P-Channel, as well as the 85 Ohm Resistance RDS On, the device can also be used as 5V @ 10nA Voltage Cutoff VGS off Id. In addition, the Power Max is 350mW, the device is offered in 30V Voltage Breakdown V BRGSS, the device has a 20mA @ 15V of Current Drain Idss Vds Vgs=0.
