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The S1PB-M3/84A is DIODE GEN PURP 100V 1A DO220AA, that includes eSMPR Series, they are designed to operate with a Standard Recovery Rectifiers Product, Packaging is shown on datasheet note for use in a Cut Tape (CT) Alternate Packaging, that offers Part Aliases features such as S1PB-M3/85A, Unit Weight is designed to work in 0.000847 oz, as well as the SMD/SMT Mounting Style, the device can also be used as DO-220AA Package Case. In addition, the Mounting Type is Surface Mount, the device is offered in DO-220AA (SMP) Supplier Device Package, the device has a Standard Recovery >500ns, > 200mA (Io) of Speed, and Diode Type is Standard, and the Current Reverse Leakage Vr is 1μA @ 100V, and Voltage Forward Vf Max If is 1.1V @ 1A, and the Voltage DC Reverse Vr Max is 100V, and Current Average Rectified Io is 1A, and the Reverse Recovery Time trr is 1.8μs, and Capacitance Vr F is 6pF @ 4V, 1MHz, it has an Operating Temperature Junction range of -55°C ~ 150°C, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Vf Forward Voltage is 1.1 V, and the Vr Reverse Voltage is 100 V, and Ir Reverse Current is 1 uA, and the If Forward Current is 1 A, and Max Surge Current is 30 A, and the Recovery Time is 1.8 us.
The S1PB-M3/85A is DIODE GEN PURP 100V 1A DO220AA, that includes 1.1V @ 1A Voltage Forward Vf Max If, they are designed to operate with a 100V Voltage DC Reverse Vr Max, Supplier Device Package is shown on datasheet note for use in a DO-220AA (SMP), that offers Speed features such as Standard Recovery >500ns, > 200mA (Io), Series is designed to work in eSMPR, as well as the 1.8μs Reverse Recovery Time trr, the device can also be used as S1PB-M3/84A Part Aliases. In addition, the Packaging is Tape & Reel (TR), the device is offered in DO-220AA Package Case, it has an Operating Temperature Junction range of -55°C ~ 150°C, and Mounting Type is Surface Mount, and the Diode Type is Standard, and Current Reverse Leakage Vr is 1μA @ 100V, and the Current Average Rectified Io is 1A, and Capacitance Vr F is 6pF @ 4V, 1MHz.
The S1PBHM3/85A is DIODE GEN PURP 100V 1A DO220AA, that includes 6pF @ 4V, 1MHz Capacitance Vr F, they are designed to operate with a 1A Current Average Rectified Io, Current Reverse Leakage Vr is shown on datasheet note for use in a 1μA @ 100V, that offers Diode Type features such as Standard, Mounting Type is designed to work in Surface Mount, it has an Operating Temperature Junction range of -55°C ~ 150°C, the device can also be used as DO-220AA Package Case. In addition, the Packaging is Tape & Reel (TR) Alternate Packaging, the device is offered in 1.8μs Reverse Recovery Time trr, the device has a eSMPR of Series, and Speed is Standard Recovery >500ns, > 200mA (Io), and the Supplier Device Package is DO-220AA (SMP), and Voltage DC Reverse Vr Max is 100V, and the Voltage Forward Vf Max If is 1.1V @ 1A.
