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IS62WV51216BLL-55TLI

  • 描述:存储类型: Volatile 存储格式: SRAM 存储容量: 8Mb (512K x 16) 电源电压: 2.5伏~3.6伏 供应商设备包装: 44-TSOP II
  • 品牌: 美国芯成 (ISSI)
  • 交期:2-3 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

数量 单价 合计
1+ 22.37549 22.37549
100+ 21.73666 2173.66670
  • 库存: 79
  • 单价: ¥22.37549
  • 数量:
    - +
  • 总计: ¥22.38
在线询价

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规格参数

  • 部件状态 可供货
  • 制造厂商 美国芯成 (ISSI)
  • 存储类型 Volatile
  • 储存接口 并联
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 时钟频率 -
  • 存储格式 SRAM
  • 技术 SRAM-异步
  • 包装/外壳 44-TSOP (0.400", 10.16毫米 Width)
  • 供应商设备包装 44-TSOP II
  • 存储容量 8Mb (512K x 16)
  • 访达时期 55 ns
  • 单字、单页写入耗时 55ns
  • 电源电压 2.5伏~3.6伏

IS62WV51216BLL-55TLI 产品详情

The IS62WV51216BLL-55TLI is a 8Mb high speed static RAM organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1 is LOW, CS2 is HIGH and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.

Feature

  • 36mW Typical operating, 12µW (typical) CMOS standby CMOS low power operation
  • TTL compatible interface levels
  • Fully static operation, no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes

IS62WV51216BLL-55TLI所属分类:存储器,IS62WV51216BLL-55TLI 由 美国芯成 (ISSI) 设计生产,可通过久芯网进行购买。IS62WV51216BLL-55TLI价格参考¥22.375491,你可以下载 IS62WV51216BLL-55TLI中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询IS62WV51216BLL-55TLI规格参数、现货库存、封装信息等信息!
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