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34VL02T/MNY

  • 描述:存储类型: Non-Volatile 存储格式: EEPROM 存储容量: 2Kb (256 x 8) 电源电压: 1.5伏~3.6伏 时钟频率: 400千赫 供应商设备包装: 8-TDFN (2x3)
  • 品牌: 美国微芯 (MICROCHIP)
  • 交期:2-3 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 3300

数量 单价 合计
1+ 3.15283 3.15283
200+ 1.22014 244.02920
500+ 1.17726 588.63400
1000+ 1.15603 1156.03900
  • 库存: 0
  • 单价: ¥3.15283
  • 数量:
    - +
  • 总计: ¥3,814.93
在线询价

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规格参数

  • 制造厂商 美国微芯 (MICROCHIP)
  • 部件状态 可供货
  • 存储类型 Non-Volatile
  • 存储格式 EEPROM
  • 技术 电可擦编程只读存储器
  • 存储容量 2Kb (256 x 8)
  • 安装类别 表面安装
  • 单字、单页写入耗时 5ms
  • 储存接口 IOC
  • 时钟频率 400千赫
  • 访达时期 900 ns
  • 包装/外壳 8-WFDFN Exposed Pad
  • 供应商设备包装 8-TDFN (2x3)
  • 工作温度 -20摄氏度~85摄氏度(TA)
  • 电源电压 1.5伏~3.6伏

34VL02T/MNY 产品详情

The Microchip Technology Inc. 34VL02T/MNY is a 2 Kbit Electrically Erasable PROM capable of operation across a broad voltage range (1.5V to 3.6V). This device has two software write-protect features for the lower half of the array, as well as an external pin that can be used to write-protect the entire array. This allows the system designer to protect none, half, or all of the array, depending on the application. The device is organized as one block of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.5V, with standby and active currents of only 100 nA and 1 mA, respectively. The 34VL02T/MNY also has a page write capability for up to 16 bytes of data. The 34VL02T/MNY is available in the standard 8-pin PDIP, surface mount SOIC, TSSOP, MSOP and TDFN packages. The 34VL02T/MNY is also available in the 6-lead, SOT-23 package.

Feature

  • Permanent and Resettable Software Write-Protect for Lower Half of the Array (00h-7Fh)
  • Single Supply with Operation Down to 1.5V
  • Low-Power CMOS Technology:     -  Read current 1 mA, typical     -  Standby current, 100 nA, typical
  • 2-Wire Serial Interface Bus, I2C™ Compatible
  • Cascadable up to Eight Devices
  • Schmitt Trigger Inputs for Noise Suppression
  • Output Slope Control to Eliminate Ground Bounce
  • 100 kHz and 400 kHz Compatibility
  • Page Write Time 3 ms, typical
  • Self-Timed Erase/Write Cycle
  • 16-Byte Page Write Buffer
  • ESD Protection > 4,000V
  • Hardware Write Protection for Entire Array
  • More than 1 Million Erase/Write Cycles
  • Data Retention > 200 Years
  • 8-Lead PDIP, SOIC, TSSOP, MSOP and TDFN packages
  • 6-Lead SOT-23 Package
  • Pb-free and RoHS Compliant
  • Temperature Range:     -  -20°C to +85°C
34VL02T/MNY所属分类:存储器,34VL02T/MNY 由 美国微芯 (MICROCHIP) 设计生产,可通过久芯网进行购买。34VL02T/MNY价格参考¥3.152834,你可以下载 34VL02T/MNY中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询34VL02T/MNY规格参数、现货库存、封装信息等信息!
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