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IS61LV5128AL-10TLI

  • 描述:存储类型: Volatile 存储格式: SRAM 存储容量: 4Mb (512K x 8) 电源电压: 3.135V~3.6V 供应商设备包装: 44-TSOP II
  • 品牌: 美国芯成 (ISSI)
  • 交期:2-3 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

数量 单价 合计
1+ 18.43028 18.43028
  • 库存: 1108
  • 单价: ¥18.43028
  • 数量:
    - +
  • 总计: ¥18.43
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规格参数

  • 部件状态 可供货
  • 制造厂商 美国芯成 (ISSI)
  • 存储类型 Volatile
  • 储存接口 并联
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 时钟频率 -
  • 存储格式 SRAM
  • 技术 SRAM-异步
  • 存储容量 4Mb (512K x 8)
  • 单字、单页写入耗时 10ns
  • 访达时期 10纳秒
  • 电源电压 3.135V~3.6V
  • 包装/外壳 44-TSOP (0.400", 10.16毫米 Width)
  • 供应商设备包装 44-TSOP II

IS61LV5128AL-10TLI 产品详情

The IS61LV5128AL-10TLI is a 512K x 8 very high-speed low power high-speed CMOS Static Random Access Memory (SRAM) organized by 524288-word by 8-bit. The IS61LV5128AL is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250µW typical with CMOS input levels. The IS61LV5128AL operates from a single 3.3V power supply and all inputs are TTL-compatible.

Feature

  • High-speed access times - 10ns
  • High-performance, low-power CMOS process
  • Multiple center power and ground pins for greater noise immunity
  • Easy memory expansion with CE and OE
  • CE Power-down
  • Fully static operation: no clock or refresh required
  • TTL compatible inputs and outputs
  • Single 3.3V power supply
IS61LV5128AL-10TLI所属分类:存储器,IS61LV5128AL-10TLI 由 美国芯成 (ISSI) 设计生产,可通过久芯网进行购买。IS61LV5128AL-10TLI价格参考¥18.430283,你可以下载 IS61LV5128AL-10TLI中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询IS61LV5128AL-10TLI规格参数、现货库存、封装信息等信息!
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