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IS61WV102416BLL-10MLI

  • 描述:存储类型: Volatile 存储格式: SRAM 存储容量: 16Mb (1M x 16) 电源电压: 2.4伏~3.6伏 供应商设备包装: 48-miniBGA (9x11)
  • 品牌: 美国芯成 (ISSI)
  • 交期:2-3 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

数量 单价 合计
1+ 62.10279 62.10279
25+ 57.07984 1426.99615
50+ 55.41760 2770.88005
100+ 53.79229 5379.22940
  • 库存: 1864
  • 单价: ¥62.10280
  • 数量:
    - +
  • 总计: ¥62.10
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规格参数

  • 部件状态 可供货
  • 制造厂商 美国芯成 (ISSI)
  • 存储类型 Volatile
  • 储存接口 并联
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 时钟频率 -
  • 存储格式 SRAM
  • 技术 SRAM-异步
  • 单字、单页写入耗时 10ns
  • 访达时期 10纳秒
  • 包装/外壳 48-TFBGA
  • 存储容量 16Mb (1M x 16)
  • 电源电压 2.4伏~3.6伏
  • 供应商设备包装 48-miniBGA (9x11)

IS61WV102416BLL-10MLI 产品详情

The IS61WV102416BLL-10MLI is a 16Mb high-speed static RAMs organized as 1024Kwords by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.

Feature

  • High-performance, low-power CMOS process
  • Multiple centre power and ground pins for greater noise immunity
  • Easy memory expansion with CE and OE options
  • CE power-down
  • Fully static operation, no clock or refresh required
  • TTL compatible inputs and outputs
  • Data control for upper and lower bytes
IS61WV102416BLL-10MLI所属分类:存储器,IS61WV102416BLL-10MLI 由 美国芯成 (ISSI) 设计生产,可通过久芯网进行购买。IS61WV102416BLL-10MLI价格参考¥62.102797,你可以下载 IS61WV102416BLL-10MLI中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询IS61WV102416BLL-10MLI规格参数、现货库存、封装信息等信息!
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