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The AS6C8016-55ZIN is IC SRAM 8MBIT 55NS 44TSOP, that includes Tray Alternate Packaging Packaging, they are designed to operate with a 44-TSOP (0.400", 10.16mm Width) Package Case, it has an Operating Temperature range of -40°C ~ 85°C (TA), that offers Interface features such as Parallel, Voltage Supply is designed to work in 2.7 V ~ 5.5 V, as well as the 44-TSOP II Supplier Device Package, the device can also be used as 8M (512K x 16) Memory Size. In addition, the Memory Type is SRAM - Asynchronous, the device is offered in 55ns Speed, the device has a RAM of Format Memory.
The AS6C8016-55BINTR is IC SRAM 8M 512X16 48-TFBGA, that includes 2.7 V ~ 5.5 V Voltage Supply, they are designed to operate with a 48-TFBGA (6x8) Supplier Device Package, Speed is shown on datasheet note for use in a 55ns, that offers Packaging features such as Tape & Reel (TR) Alternate Packaging, Package Case is designed to work in 48-LFBGA, it has an Operating Temperature range of -40°C ~ 85°C (TA), the device can also be used as SRAM - Asynchronous Memory Type. In addition, the Memory Size is 8M (512K x 16), the device is offered in Parallel Interface, the device has a RAM of Format Memory.
AS6C8016-55TIN with circuit diagram manufactured by Alliance Memory. is part of the Memory, , and with support for "SRAM 8M L-Power, SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 55ns, SRAM 8M L-Power, 2.7-3.6V 512k x 16, 48pin.
