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47L16T-E/ST

  • 描述:存储类型: Non-Volatile 存储格式: EERAM 存储容量: 16Kb (2K x 8) 电源电压: 2.7伏~3.6伏 时钟频率: 1兆赫 供应商设备包装: 8-TSSOP
  • 品牌: 美国微芯 (MICROCHIP)
  • 交期:2-3 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 2500

数量 单价 合计
1+ 7.06234 7.06234
200+ 2.73245 546.49120
500+ 2.63787 1318.93550
1000+ 2.59583 2595.83400
  • 库存: 0
  • 单价: ¥7.06235
  • 数量:
    - +
  • 总计: ¥6,489.59
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规格参数

  • 制造厂商 美国微芯 (MICROCHIP)
  • 部件状态 可供货
  • 存储类型 Non-Volatile
  • 安装类别 表面安装
  • 储存接口 IOC
  • 时钟频率 1兆赫
  • 电源电压 2.7伏~3.6伏
  • 存储容量 16Kb (2K x 8)
  • 工作温度 -40摄氏度~125摄氏度(TA)
  • 包装/外壳 8-TSSOP (0.173", 4.40毫米 Width)
  • 存储格式 EERAM
  • 技术 EEPROM,SRAM
  • 供应商设备包装 8-TSSOP
  • 访达时期 400 ns
  • 单字、单页写入耗时 1ms

47L16T-E/ST 产品详情

The Microchip Technology Inc 47L16T-E/ST EERAM is a 16Kbit SRAM with EEPROM Backup. The I2CEERAM Memory is a Low-Cost NVSRAM that Eliminates the Need for an ExternalBattery to Retain Data. The device is organized as 2048 x 8 bits and utilizes the I2C serial interface. The 47L16T-E/ST provides infinite read and write cycles to the SRAM while the EEPROM cells provide high endurance non-volatile storage of Data. With an external capacitor, SRAM data is automatically transferred to the EEPROM upon power-loss. Data can also be transferred manually by using either the hardware store pin or by software control. Upon power-up, the EEPROM data is automatically recalled to the SRAM. Recall can also be initiated through software control. The unlimited endurance makes the EERAM useful in applications that need to constantly monitor or record data.The 47L16T-E/ST EERAM has a 2.7-3.6V operating voltage rangeand is available in 8-lead SOIC, TSSOP and PDIP packages. The EERAM works from -40C to 125C and is automotive grade qualified.

Feature

  • 16Kbit SRAM with EEPROM Back Up
    • Automatic Store to EEPROM upon power-down (using optional external capacitor)
    • Automatic Recall to SRAM Array upon power-up
    • Hardware Store Pin for manual Store Operations
    • Software commands for initiating Store and Recall Operations
    • Store Time 40ms (max)
  • 2.7V -3.6V Operation
  • High-Speed I2C Interface (Up to 1MHz)
  • Non-Volatile External Event Detect Flag
  • High Reliability:
    • Infinite Read and Write Cycles to SRAM Array
    • More than 1 Million Store Cycles to EEPROM
    • Data Retention: >200 Years
    • ESD Protection: >2,000V
    • Reliable Data Storage during Power Loss
  • Low Power CMOS Technology:
    • 1mA active current (typ)
    • 40uA Standby Current  (max)
  • Write Protection:
    • Software Write Protection from 1/64 of SRAM array to whole array
  • Zero Cycle delay reads and writes
  • Cascadable up to four devices
  • Available Temperature Ranges:
    • Industrial(I): -40oC to +85oC
    • Automotive (E): -40oC to +125oC
  • 8-Lead PDIP, SOIC and TSSOP Packages
47L16T-E/ST所属分类:存储器,47L16T-E/ST 由 美国微芯 (MICROCHIP) 设计生产,可通过久芯网进行购买。47L16T-E/ST价格参考¥7.062349,你可以下载 47L16T-E/ST中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询47L16T-E/ST规格参数、现货库存、封装信息等信息!
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