The M29W160EB70N6E is a parallel NOR non-volatile Flash Embedded Memory Device that can be read, erased and reprogrammed. These operations can be performed using a single low voltage 2.7 to 3.6V supply. On power-up the memory defaults to read mode where it can be read in the same way as a ROM or EPROM. The device is divided into blocks that can be erased independently to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental program or erase commands from modifying the memory. Program and erase commands are written to the command interface of the memory. An on-chip program/erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
Feature
- Program/erase controller - Embedded byte/word program algorithms
- Unlock bypass program command - Fast buffered/batch programming
- Temporary block unprotect mode
- Low power consumption - standby and automatic mode
- 100000 Program/erase cycles per block
