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The TH58BVG3S0HTA00 is EEPROM SLC 4GB NAND 24NM 48TSOP, that includes Benand? Series, they are designed to operate with a Tray Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as 48-TFSOP (0.724", 18.40mm Width), it has an Operating Temperature range of 0°C ~ 70°C (TA), as well as the Parallel Interface, the device can also be used as 2.7 V ~ 3.6 V Voltage Supply. In addition, the Supplier Device Package is 48-TSOP I, the device is offered in 8G (1G x 8) Memory Size, the device has a EEPROM - NAND of Memory Type, and Speed is 25ns, and the Access Time is 25 ns, and Format Memory is EEPROMs - Serial, it has an Maximum Operating Temperature range of + 70 C, it has an Minimum Operating Temperature range of 0 C, and the Operating Supply Voltage is 3.3 V, and Interface Type is Parallel, and the Organization is 1 G x 8, and Supply Current Max is 30 mA, and the Supply Voltage Max is 3.6 V, and Supply Voltage Min is 2.7 V.
TH58BYG2S3HBAI6 with user guide, that includes 1.7 V ~ 1.95 V Voltage Supply, they are designed to operate with a 67-VFBGA (6.5x8) Supplier Device Package, Speed is shown on datasheet note for use in a 25ns, that offers Series features such as Benand?, Packaging is designed to work in Tray, as well as the 67-VFBGA Package Case, it has an Operating Temperature range of -40°C ~ 85°C (TA). In addition, the Memory Type is EEPROM - NAND, the device is offered in 4G (512M x 8) Memory Size, the device has a Parallel of Interface, and Format Memory is EEPROMs - Serial.
TH58BVG3S0HTAI0 with circuit diagram manufactured by Toshiba. is part of the Memory, , and with support for Flash Memory 8 GBIT CMOS NAND EEPROM, NAND Flash Parallel 3.3V 8G-bit 1G x 8.
TH58BYG2S3HBAI4 with EDA / CAD Models manufactured by Toshiba. is part of the Memory, , and with support for Flash Memory 4Gb 1.8V IC Flash NAND & BENAND EEPROM, SLC NAND Flash Parallel 1.8V 4G-bit.
