NPN silicon germanium microwave transistor for high speed, low noise applications in aplastic, 4-pin dual-emitter SOT343F package.
Feature
- Low noise high linearity RF transistor
- 110 GHz fT silicon germanium technology
- Optimal linearity for low current and high gain
- Low minimum noise figure of 0.50 dB at 2.4 GHz and 0.74 dB at 5.8 GHz
- Low component count Wi-Fi LNA application circuits available for 2.4 GHz ISM bandand 4.9 GHz to 5.9 GHz U-NII band, with optimized RF performance:
- Low current: 10.8 mA
- Noise figure < 1.2 dB
- Gain: 13.1 dB at 2.4 GHz, 12.2 dB at 5 GHz
- High IP3: 15.7 dBm at 2.4 GHz, 18.8 dBm at 5 GHz
- Very fast on/off times
- Unconditionally stable
- Higher IP3, higher gain or lower noise figure possible with different application circuits
- High linearity applications
- Medium output power applications
- Wi-Fi / WLAN / WiMAX
- ZigBee
