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PMZ350UPEYL with pin details, that includes Digi-ReelR Alternate Packaging Packaging, they are designed to operate with a SMD/SMT Mounting Style, Package Case is shown on datasheet note for use in a SC-101, SOT-883, that offers Technology features such as Si, it has an Operating Temperature range of -55°C ~ 150°C (TJ), as well as the Surface Mount Mounting Type, the device can also be used as 1 Channel Number of Channels. In addition, the Supplier Device Package is DFN1006-3, the device is offered in 1 P-Channel ESD Configuration, the device has a MOSFET P-Channel, Metal Oxide of FET Type, and Power Max is 360mW, and the Drain to Source Voltage Vdss is 20V, and Input Capacitance Ciss Vds is 127pF @ 10V, and the FET Feature is Standard, and Current Continuous Drain Id 25°C is 1A (Ta), and the Rds On Max Id Vgs is 450 mOhm @ 300mA, 4.5V, and Vgs th Max Id is 950mV @ 250μA, and the Gate Charge Qg Vgs is 1.9nC @ 4.5V, and Pd Power Dissipation is 360 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 9 ns, and Rise Time is 5 ns, and the Vgs Gate Source Voltage is +/- 8 V, and Id Continuous Drain Current is - 1.4 A, and the Vds Drain Source Breakdown Voltage is - 20 V, and Vgs th Gate Source Threshold Voltage is - 450 mV, and the Rds On Drain Source Resistance is 940 mOhms, and Transistor Polarity is P-Channel, and the Typical Turn Off Delay Time is 26 ns, and Typical Turn On Delay Time is 4 ns, and the Qg Gate Charge is 1.3 nC, and Forward Transconductance Min is 1.4 S, and the Channel Mode is Enhancement.
PMZ370UNEYL with user guide, that includes 770 mV Vgs th Gate Source Threshold Voltage, they are designed to operate with a +/- 8 V Vgs Gate Source Voltage, Vds Drain Source Breakdown Voltage is shown on datasheet note for use in a 30 V, that offers Typical Turn On Delay Time features such as 11 ns, Typical Turn Off Delay Time is designed to work in 54 ns, as well as the 1 N-Channel Transistor Type, the device can also be used as N-Channel Transistor Polarity. In addition, the Technology is Si, the device is offered in 9 ns Rise Time, the device has a 370 mOhms of Rds On Drain Source Resistance, and Qg Gate Charge is 0.77 nC, and the Pd Power Dissipation is 360 mW, and Packaging is Reel, and the Package Case is DFN1006-3, and Number of Channels is 1 Channel, and the Mounting Style is SMD/SMT, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and Id Continuous Drain Current is 900 mA, and the Forward Transconductance Min is 1580 mS, and Fall Time is 27 ns, and the Configuration is Single, and Channel Mode is Enhancement.
PMZ350XN with circuit diagram manufactured by NXP. The PMZ350XN is available in SOT-883 Package, is part of the FETs - Single.
