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The RUU002N05T106 is MOSFET N-CH 50V 0.2A UMT3, that includes RUU002N05 Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as SC-70, SOT-323, Technology is designed to work in Si, it has an Operating Temperature range of 150°C (TJ), the device can also be used as Surface Mount Mounting Type. In addition, the Number of Channels is 1 Channel, the device is offered in UMT3 Supplier Device Package, the device has a Single of Configuration, and FET Type is MOSFET N-Channel, Metal Oxide, and the Power Max is 200mW, and Transistor Type is 1 N-Channel, and the Drain to Source Voltage Vdss is 50V, and Input Capacitance Ciss Vds is 25pF @ 10V, and the FET Feature is Logic Level Gate, 1.2V Drive, and Current Continuous Drain Id 25°C is 200mA (Ta), and the Rds On Max Id Vgs is 2.2 Ohm @ 200mA, 4.5V, and Vgs th Max Id is 1V @ 1mA, and the Pd Power Dissipation is 200 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 55 ns, and the Rise Time is 6 ns, and Vgs Gate Source Voltage is 8 V, and the Id Continuous Drain Current is 200 mA, and Vds Drain Source Breakdown Voltage is 50 V, and the Rds On Drain Source Resistance is 1.6 Ohms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 15 ns, and Typical Turn On Delay Time is 4 ns, and the Forward Transconductance Min is 0.4 S, and Channel Mode is Enhancement.
RUW101MW with user guide, that includes Protection Module Type, they are designed to operate with a Accessories Product.
RUU002N05 T106 with circuit diagram manufactured by ROHM. The RUU002N05 T106 is available in SOT23-3 Package, is part of the IC Chips.
