Feature
- NPN Silicon Microwave Power Transistor
- Internal Input and Output Impedance Matching
- Gold Metallization System
- Diffused Emitter Ballasting Resistors
- High Efficiency Inter-Digitized Geometry
- Broadband Class C Operation
- Common Base Configuration
- Hermetic Metal/Ceramic Package
- RoHS compliant
- Aerospace and Defense
- ISM
Applications
- Gain: 9 dB
- Efficiency: 45 %
- Bias Voltage: 50 V
- Pout: 500 W
- Min Frequency: 960 MHz
- Max Frequency: 1,215 MHz