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The IDH10G120C5XKSA1 is DIODE SCHOTTKY 1200V 10A TO220-2, that includes thinQ!? Series, they are designed to operate with a Schottky Silicon Carbide Diodes Product, Packaging is shown on datasheet note for use in a Tube, that offers Part Aliases features such as IDH10G120C5 SP001079722, Unit Weight is designed to work in 0.211644 oz, as well as the Through Hole Mounting Style, the device can also be used as TO-220-2 Package Case. In addition, the Technology is SiC, the device is offered in Through Hole Mounting Type, the device has a PG-TO220-2-1 of Supplier Device Package, and Configuration is Single, and the Speed is Fast Recovery = 200mA (Io), and Diode Type is Silicon Carbide Schottky, and the Current Reverse Leakage Vr is 62μA @ 1200V, and Voltage Forward Vf Max If is 1.8V @ 10A, and the Voltage DC Reverse Vr Max is 1200V (1.2kV), and Current Average Rectified Io is 10A (DC), and the Capacitance Vr F is 525pF @ 1V, 1MHz, it has an Operating Temperature Junction range of -55°C ~ 175°C, and the Pd Power Dissipation is 165 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Vf Forward Voltage is 1.5 V, and the Vr Reverse Voltage is 1.2 kV, and Ir Reverse Current is 4 uA, and the If Forward Current is 10 A, and Vrrm Repetitive Reverse Voltage is 1.2 kV, and the Ifsm Forward Surge Current is 99 A.
The IDH10G65C5 is DIODE SCHOTTKY 650V 10A TO220-2, that includes 1.7V @ 10A Voltage Forward Vf Max If, they are designed to operate with a 650V Voltage DC Reverse Vr Max, Unit Weight is shown on datasheet note for use in a 0.211644 oz, that offers Supplier Device Package features such as PG-TO220-2, Speed is designed to work in No Recovery Time > 500mA (Io), as well as the thinQ!? Series, the device can also be used as 0ns Reverse Recovery Time trr. In addition, the Part Aliases is IDH10G65C5XK IDH10G65C5XKSA1 SP000925208, the device is offered in Bulk Packaging, the device has a TO-220-2 of Package Case, it has an Operating Temperature Junction range of -55°C ~ 175°C, and the Mounting Style is Through Hole, and Mounting Type is Through Hole, and the Diode Type is Silicon Carbide Schottky, and Current Reverse Leakage Vr is 340μA @ 650V, and the Current Average Rectified Io is 10A (DC), and Capacitance Vr F is 300pF @ 1V, 1MHz.
The IDH09SG60CXKSA1 is DIODE SCHOTTKY 600V 9A TO220-2, that includes 280pF @ 1V, 1MHz Capacitance Vr F, they are designed to operate with a 9A (DC) Current Average Rectified Io, Current Reverse Leakage Vr is shown on datasheet note for use in a 80μA @ 600V, that offers Diode Type features such as Silicon Carbide Schottky, Mounting Type is designed to work in Through Hole, it has an Operating Temperature Junction range of -55°C ~ 175°C, the device can also be used as TO-220-2 Package Case. In addition, the Packaging is Tube, the device is offered in 0ns Reverse Recovery Time trr, the device has a thinQ!? of Series, and Speed is No Recovery Time > 500mA (Io), and the Supplier Device Package is PG-TO220-2, and Voltage DC Reverse Vr Max is 600V, and the Voltage Forward Vf Max If is 2.1V @ 9A.
The IDH10G65C5XKSA1 is Schottky Diodes & Rectifiers SIC DIODES, that includes Tube Packaging, they are designed to operate with a TO-220-2 Package Case, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Technology features such as SiC, Product is designed to work in Schottky Silicon Carbide Diodes, as well as the IDH10G65C5 IDH10G65C5XK SP000925208 Part Aliases, the device can also be used as IDH10G65 Series. In addition, the Pd Power Dissipation is 89 W, the device is offered in 82 A Ifsm Forward Surge Current, the device has a 650 V of Vrrm Repetitive Reverse Voltage, and If Forward Current is 10 A, and the Unit Weight is 0.211644 oz, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C.
